Zobrazeno 1 - 10
of 67
pro vyhledávání: '"C.E. Weitzel"'
Autor:
J.-E. Mueller, Ralf Brederlow, H.S. Bennett, Peter E. Cottrell, J.C. Costa, M. Racanelli, W.M. Huang, A.A. Immorlica, Bin Zhao, Hisashi Shichijo, C.E. Weitzel
Publikováno v:
IEEE Transactions on Electron Devices. 52:1235-1258
The relationships between device feature size and device performance figures of merit (FoMs) are more complex for radio frequency (RF) applications than for digital applications. Using the devices in the key circuit blocks for typical RF transceivers
Autor:
V.K. Nair, C.E. Weitzel
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 49:2184-2187
This year, we significantly enhanced our electronic paper submission, evaluation, and acceptance process. We also introduced a web-based paper grading and selection procedure for the first time. A comprehensive software program based on Lotus Notes w
Autor:
C.E. Weitzel
Publikováno v:
Materials Science Forum. :907-912
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A four quadrant multiplier has a variety of high frequency, signal processing applications (phase detection, modulation, and frequency conversion) . This paper describes work undertaken to design, model, fabricate, and test a GaAs monolithic four qua
Publikováno v:
GaAs Reliability 2002 Workshop.
Summary form only given. GaAs-based HBT reliability is determined by many factors including device layout design, epi-material properties and device fabrication processes. The latest generation of device designs across the industry almost without exc
Autor:
C.E. Weitzel
Publikováno v:
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.
A wide variety of semiconductor devices are used in wireless power amplifiers. The RF performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies are reviewed and compared.
Autor:
C.E. Weitzel
Publikováno v:
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).
A wide variety of semiconductor devices are used in wireless power amplifiers. This paper will review the advantages and disadvantages of these devices for handheld and infrastructure applications.
Autor:
C.E. Weitzel
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
Wide bandgap semiconductors, SiC and GaN, have attracted increased attention because of their potential for higher performance switching and RF power devices. SiC Schottky diodes, MOSFET's, SIT's and MESFET's and AlGaN/GaN HFET's are described and th
Autor:
C.E. Weitzel
Publikováno v:
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.
AlGaN HFET's have achieved the highest f/sub max/ 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). On the other hand, 4H-SiC SIT's have achieved the highest output power, 450 W (pulse
Autor:
C.E. Weitzel
Publikováno v:
IEEE Transactions on Electron Devices. 25:878-884
A process for selectively etching holes in {1102} sapphire using SF 6 in H 2 is described. SiO 2 , Si 3 N 4 , and combinations thereof are studied as possible etchant masks. Refilling the holes with epitaxial silicon produces an SIS (silicon-in-sapph