Zobrazeno 1 - 10
of 142
pro vyhledávání: '"C.E. Ho"'
Publikováno v:
Journal of Materials Research and Technology, Vol 11, Iss , Pp 1895-1910 (2021)
Intermetallic compound(s) (IMC) that nucleates at the interface between solder and Cu trace during a soldering reaction, is one of the most crucial factors for microelectronic packaging reliability. This study was conducted to modify the IMC microstr
Externí odkaz:
https://doaj.org/article/e3e1564139424e4b892e43183728ab85
Publikováno v:
Deep Foundations on Bored and Auger Piles ISBN: 9781003078517
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40ac7e0e22846a0f9badc550fcd21e90
https://doi.org/10.1201/9781003078517-16
https://doi.org/10.1201/9781003078517-16
Publikováno v:
Soldering & Surface Mount Technology. 20:4-7
PurposeTo evaluate the role of imposed strain on whisker growth in matte tin, and to identify the appropriate deformation states and environments that will facilitate the development of a reliable, accelerated test methodology to provide results repr
Publikováno v:
Journal of Materials Research. 22:3265-3272
Simultaneous direct current stressing with thermal aging accelerates the migration of conducting species resulting in significant microstructural coarsening. Because of the synergistic fields influence, such coarsening begins from the anode and propa
Publikováno v:
Soldering & Surface Mount Technology. 14:25-29
The reactions between Sn–Ag–Cu lead‐free solders of various compositions and Au/Ni surface finish in advanced electronic packages were studied. Three solder compositions, Sn–3.5Ag, Sn4Ag–0.5Cu, and Sn–3.5Ag‐0.75Cu were used, and their p
Publikováno v:
IEEE Transactions on Advanced Packaging. 24:493-498
Gold over Ni is one of the most common surface finishes for Cu soldering pads in ball-grid-array (BGA) and other electronic packages. The Au layer is for oxidation protection, and the Ni layer serves as a solderable diffusion barrier. In this study,
Akademický článek
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Publikováno v:
2007 IEEE Conference on Electron Devices and Solid-State Circuits.
Fabrication of an AlGalnP multiple quantum well semiconductor with a circular ridge waveguide ring resonator of 100 um diameter and 10 um width by using a novel UV laser-assisted cryo-etching technique is presented. It shows single-modes output at th
Autor:
Chan Hin Kam, Jian Liu, Bee Khuan Law, H.P. Li, Yuen Chuen Chan, Yee Loy Lam, C.E. Ho, Wenxiu Que, Kantisara Pita, Ji Zhou
Publikováno v:
SPIE Proceedings.
TiO 2 /organically modified silane (ORMOSIL) optical waveguide thin films have been prepared at low temperature by the sol-gel technique by using y- Glycidoxypropyltrimethoxysilane and tetrapropylorthotitanate as precursors. Atomic force microscopy h
Akademický článek
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