Zobrazeno 1 - 10
of 63
pro vyhledávání: '"C.D. Presti"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:604-618
A real-time adaptive digital predistortion system (RT-ADPD) for power amplifier linearization is described in this paper, featuring fast closed-loop adaptation to provide robust linearity across quickly shifting power amplifier (PA) operating conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c19cb01275e56812d2cade01b4c2210c
https://doi.org/10.1109/tmtt.2011.2181860
https://doi.org/10.1109/tmtt.2011.2181860
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 58:57-64
A single-stage stacked field-effect transistor (FET) linear power amplifier (PA) is demonstrated using 0.28-?m 2.5-V standard I/O FETs in a 0.13-?m silicon-on-insulator (SOI) CMOS technology. To overcome the low breakdown voltage limit of MOSFETs, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8817330df679be8292863167fcb7f601
https://doi.org/10.1109/tmtt.2009.2036323
https://doi.org/10.1109/tmtt.2009.2036323
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:2122-2130
In this paper, the potential of load adaptation for enhanced backoff efficiency in RF power amplifiers (PAs) has been investigated through a 0.13-mum silicon-on-insulator (SOI) CMOS fabrication technology. The RF power performance of the adopted SOI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f66416ed478127641d66cf220884e88a
https://doi.org/10.1109/tmtt.2009.2027078
https://doi.org/10.1109/tmtt.2009.2027078
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:2057-2066
In this paper, the protection of CMOS power amplifiers against load mismatch is addressed. To this purpose, a closed-loop protection circuit is proposed, which is based on a novel current-mode detection and comparison technique. The circuit allows a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b2e045b658d7f4ffd0d935124a89fb4
https://doi.org/10.1109/jssc.2008.2001894
https://doi.org/10.1109/jssc.2008.2001894
Publikováno v:
Analog Integrated Circuits and Signal Processing. 51:51-54
A variable-gain up-conversion mixer for 5-GHz WLAN applications is presented, whose input stage is based on a novel variable gain transconductor. The proposed topology features reduced power consumption by exploiting dc current reuse for mixer biasin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b8343c88cc315a17c803b1ca425f6c3
https://doi.org/10.1007/s10470-007-9048-6
https://doi.org/10.1007/s10470-007-9048-6
Autor:
Gianfranco Di Stefano, Isodiana Crupi, Delfo Sanfilippo, Andrea Canino, Corrado Bongiorno, Francesco Priolo, Alessia Irrera, Pier Giorgio Fallica, Giorgia Franzò, Fabio Iacona, A. Piana, C.D. Presti
Publikováno v:
Nanotechnology (Bristol. Print) 17 (2006): 1428–1436. doi:10.1088/0957-4484/17/5/044
info:cnr-pdr/source/autori:Irrera, A; Iacona, F; Crupi, I; Presti, CD; Franzo, G; Bongiorno, C; Sanfilippo, D; Di Stefano, G; Piana, A; Fallica, PG; Canino, A; Priolo, F/titolo:Electroluminescence and transport properties in amorphous silicon nanostructures/doi:10.1088%2F0957-4484%2F17%2F5%2F044/rivista:Nanotechnology (Bristol. Print)/anno:2006/pagina_da:1428/pagina_a:1436/intervallo_pagine:1428–1436/volume:17
info:cnr-pdr/source/autori:Irrera, A; Iacona, F; Crupi, I; Presti, CD; Franzo, G; Bongiorno, C; Sanfilippo, D; Di Stefano, G; Piana, A; Fallica, PG; Canino, A; Priolo, F/titolo:Electroluminescence and transport properties in amorphous silicon nanostructures/doi:10.1088%2F0957-4484%2F17%2F5%2F044/rivista:Nanotechnology (Bristol. Print)/anno:2006/pagina_da:1428/pagina_a:1436/intervallo_pagine:1428–1436/volume:17
We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47aa80ac62cf355cdb9cbb990adadaee
https://doi.org/10.1088/0957-4484/17/5/044
https://doi.org/10.1088/0957-4484/17/5/044
Publikováno v:
IEEE Microwave and Wireless Components Letters. 21:433-435
An attenuator is presented in a 0.13 μm silicon-on-insulator (SOI) CMOS technology, to be used for power control of RF wireless transmitters. The design is based on a T-network consisting of two series switches and 63 shunt switches. A gate switchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ddda0d523c5be903701744b158bc701
https://doi.org/10.1109/lmwc.2011.2160160
https://doi.org/10.1109/lmwc.2011.2160160
Autor:
C.D. Presti, Young-Pyo Hong, Donald F. Kimball, Chin Hsia, Peter M. Asbeck, J Schellenberg, Jonmei J. Yan
Publikováno v:
IEEE Microwave and Wireless Components Letters. 21:157-159
This letter presents a 44 GHz GaAs MMIC-based power amplifier (PA) which uses envelope tracking (ET) techniques for efficiency enhancement. Digital pre-distortion (DPD) is also employed to achieve high linearity. For a 7.6 dB PAPR 64QAM 20 MHz bandwi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a22bb3220786a0c1522b4ad95d797e12
https://doi.org/10.1109/lmwc.2010.2102747
https://doi.org/10.1109/lmwc.2010.2102747
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
Adaptive Digital Predistortion (DPD) is applied to a spec-compliant class-AB GaAs HBT PA module for WCDMA handsets. It is shown that, by using a re-optimized load line, the efficiency can be increased from 37.5% to 47% at nominal 28.5 dBm output powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58417a94ef80285277382082a6c9d923
https://doi.org/10.1109/mwsym.2010.5517471
https://doi.org/10.1109/mwsym.2010.5517471
Publikováno v:
2010 IEEE Radio Frequency Integrated Circuits Symposium.
A UHF RFID rectifier which turns on at near zero input voltage is demonstrated. The rectifier is fabricated in 0.25-µm silicon-on-sapphire (SOS) CMOS technology using intrinsic, near zero threshold devices. A novel improved cross-coupled bridge topo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e87515fea6c6452bb6cf8d7440d9975
https://doi.org/10.1109/rfic.2010.5477409
https://doi.org/10.1109/rfic.2010.5477409