Zobrazeno 1 - 10
of 93
pro vyhledávání: '"C.D. Marsh"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84dc8c908eba78b058844d319bc2eff6
https://doi.org/10.1201/9781003069621-65
https://doi.org/10.1201/9781003069621-65
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
The behaviour of fluorine in as-deposited polysilicon (p-Si) and as-deposited amorphous Si (a-Si) layers after annealing in the range 600-950C us investigated. The p-Si and a-Si were deposited by LPCVD at 610 and 560C, respectively, implanted with F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::420dae2b933a7600dc4b55f454157e74
https://doi.org/10.1201/9781351074629-78
https://doi.org/10.1201/9781351074629-78
Akademický článek
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We report a technique of fabrication of Al nanoislands of dimensions as small as 3 nm. Thin Al foils were anodized from both the surfaces under conditions suitable for the growth of porous alumina. Unanodized Al nanoislands were thus formed at the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19a06c89fa1c9570321b6067fd45fd44
https://doi.org/10.1116/1.1532025
https://doi.org/10.1116/1.1532025
Publikováno v:
IEEE Transactions on Electron Devices. 48:2506-2513
This paper investigates the effects of an in-situ hydrogen bake and an ex-situ hydrofluoric acid (HF) etch prior to polysilicon deposition on the electrical characteristics of bipolar transistors fabricated with low thermal budget in-situ phosphorus-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e58b0b3a1bfa60f92b3b4a551dc2618
https://doi.org/10.1109/16.960375
https://doi.org/10.1109/16.960375
Publikováno v:
Journal of Applied Physics. 87:7567-7578
A comprehensive study is made of the behaviour and effects of fluorine in n+ polysilicon layers. Sheet resistance, TEM and SIMS are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24637b918befcbf0a4f90ada0734044
https://doi.org/10.1063/1.373023
https://doi.org/10.1063/1.373023
Akademický článek
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Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 99:479-483
In this paper, some of the important results based on SIMS, RBS, ion channelling, and TEM studies of the as-implanted and annealed SIMOX materials are presented. The mechanisms responsible for the buried oxide layer formation are discussed, together
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8cbb2646e71168a6c00e5e52b6402f9
https://doi.org/10.1016/0168-583x(95)00043-7
https://doi.org/10.1016/0168-583x(95)00043-7
Publikováno v:
Semiconductor Science and Technology. 9:1404-1413
A range of electrical characterization techniques have been applied to thin film, thin buried oxide SIMOX SOI substrate. Some capacitance-voltage results were seen to exhibit frequency dispersion due to high concentrations of surface states but have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f444430de276656cf54169058e78d59
https://doi.org/10.1088/0268-1242/9/7/019
https://doi.org/10.1088/0268-1242/9/7/019
Autor:
C.D. Marsh, Richard J. Chater, G.R. Booker, John A. Kilner, A. Nejim, P.L.F. Hemment, Li Yupu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:236-242
To follow the mass transport during annealing of SIMOX structure four 〈100〉 single crystal silicon wafers were implanted at 680°C with 90 keV or 70 keV 18 O + in order to understand and quantify the effects of the SiO 2 capping layer on the grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b263964aca7960ba0eb80669be43bfa
https://doi.org/10.1016/0168-583x(94)95819-x
https://doi.org/10.1016/0168-583x(94)95819-x