Zobrazeno 1 - 10
of 35
pro vyhledávání: '"C.D. Kourkoutas"'
Autor:
P.C. Euthymiou, G. E. Giakoumakis, B. Szentpáli, B. Kovács, G. E. Zardas, K. Somogyi, P. C. Banbury, C.D. Kourkoutas
Publikováno v:
Acta Physica Hungarica. 74:7-19
We investigated the effect of 0.65 MeV electron irradiation on the transport parameters of GaAs FATFETs with an S-doped active channel of thickness 0.2 μm to 5 μm. We measured mainly the drift mobility and carrier concentration profile at severall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b8f3d4f9903e917a8b5f29465fc1c1
https://doi.org/10.1007/bf03055233
https://doi.org/10.1007/bf03055233
Autor:
George J. Papaioannou, C.D. Kourkoutas
Publikováno v:
Solid-State Electronics. 37:373-376
In the present work we propose a fast solution of the Poisson's equation in FETs. The method is valid, if the deep centers are uniformly distributed within 1 μm below the interface between the active layer and the substrate. The implicit method is c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d552962ec68dbc67399588ed7a0c65a
https://doi.org/10.1016/0038-1101(94)90090-6
https://doi.org/10.1016/0038-1101(94)90090-6
Publikováno v:
Solid State Communications. 89:45-49
Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 microm, which correspond to the limits of the dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::105ddbf45d7e3fd9898ac1151d5734fc
https://doi.org/10.1016/0038-1098(94)90415-4
https://doi.org/10.1016/0038-1098(94)90415-4
Autor:
T. A. Kuzemchenko, V.S. Vavilov, P.D. Bekris, S. Yu. Sokolov, D. L. Khavroshin, C.D. Kourkoutas, M.V. Chukichev, G. N. Galkin, L. K. Vodopyanov, R. R. Resvanov, E. A. Bobrova, Yu. A. Aleshchenko, A. E. Kiv, P. C. Euthymiou
Publikováno v:
Radiation Effects and Defects in Solids. 125:323-331
New experimental data are presented which indicate the change of defect centers concentration in GaAs at macroscopic (up to millimeters) distances from the implanted regions edge. These data were obtained by locally exited cathodoluminescence, by obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cfa7155b0c286fd6008736bdad8e1de
https://doi.org/10.1080/10420159308220210
https://doi.org/10.1080/10420159308220210
Publikováno v:
Solid State Communications. 78:849-852
Drift mobility and electron concentration values in GaAs MESFETs obtained by capacitance-conductance measurements are corrected by means of a self-consistent iterative procedure. The final results are compared with the experimental Hall mobility data
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82630065237e11630efc1330ef2210d5
https://doi.org/10.1016/0038-1098(91)90633-7
https://doi.org/10.1016/0038-1098(91)90633-7
Autor:
M. Kuliffayova, G.J. Papaioannou, J. Novac, C.D. Kourkoutas, P. Kordos, V. Ioannou-Sougleridis
Publikováno v:
Solid State Communications. 78:543-546
The scattering mechanisms of holes in In 0.53 Ga 0.47 As layers doped with Pr are investigated by analyzing the conductivity and Hall mobility data. The contribution of each individual scattering mechanism is calculated and values for the characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40bccde9b1c71c3d05f74f2244107b06
https://doi.org/10.1016/0038-1098(91)90373-4
https://doi.org/10.1016/0038-1098(91)90373-4
Publikováno v:
Solid State Communications. 74:305-308
DLTS studies on as grown Czochralski n -type GaP : Te show peaks corresponding to electron activation of 0.205, 0.485, 0.65 and 0.567 eV. After irradiation by 1 MeV electrons at room temperature two new levels are found at 0.248 and 0.329 eV and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a154631d1f71fbf05d22692ef34da2c
https://doi.org/10.1016/0038-1098(90)90191-d
https://doi.org/10.1016/0038-1098(90)90191-d
Autor:
Dimitrios Nikolopoulos, S. David, Ioannis Sianoudis, C.D. Kourkoutas, Dionisis Cavouras, G.S. Panayiotakis, Ioannis Valais, Christos Michail, Ioannis Kandarakis
Publikováno v:
2006 IEEE Nuclear Science Symposium Conference Record.
LYSO:Ce and LuYAP:Ce are single crystal scintillators of high density, non-hydroscopic, high light yield and short decay time and have been successfully used in small animal PET imagers. In our study, the luminescence emission properties of (Lu0.9,Y0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d5356565525aab9d3cf1b9d51d3ecc
https://doi.org/10.1109/nssmic.2006.356056
https://doi.org/10.1109/nssmic.2006.356056
Publikováno v:
Solid State Communications. 80:321-323
The influence of the electron and hole traps, introduced by electron irradiation, on the drift mobility and carrier concentration profiles of the GaAs epitaxial layer structure was investigated. The DLTS and DLOS measurements indicated three electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13f56531b0728844fefa88736c175f97
https://doi.org/10.1016/0038-1098(91)90138-l
https://doi.org/10.1016/0038-1098(91)90138-l
Publikováno v:
Solid State Communications. 74:999-1001
A relation between the shift of the Fermi level and the Hall mobility at room temperature is presented for a variety of direct gap III–V group semiconductors. The theoretical calculations concern particularly the sensitivity of the mobility due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60a5a78dc659802bed0afef97186e982
https://doi.org/10.1016/0038-1098(90)90473-o
https://doi.org/10.1016/0038-1098(90)90473-o