Zobrazeno 1 - 10
of 433
pro vyhledávání: '"C.A.T. Salama"'
Autor:
C.A.T. Salama, Shohreh Ghetmiri
Publikováno v:
Analog Integrated Circuits and Signal Processing. 63:381-395
This paper describes the design of a high-speed 8-bit Analog to digital converter (ADC) used in direct IF sampling receivers for satellite communication systems in a 0.25 μm, 190 GHz SiGe BiCMOS process. A high resolution front-end track-and-hold am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7508b3d206c1ad6753cd66c4179d66b
https://doi.org/10.1007/s10470-009-9422-7
https://doi.org/10.1007/s10470-009-9422-7
Autor:
C.A.T. Salama, Il-Yong Park
Publikováno v:
IEEE Circuits and Devices Magazine. 22:10-15
The super junction (SJ) concept (Coe et al.) applied to power semiconductor devices is attractive due to its potential for reducing on-resistance at a given breakdown voltage. Discrete SJ vertical power devices have recently become available commerci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22fb9e68bed0418f3ffd9671c837f8ad
https://doi.org/10.1109/mcd.2006.307271
https://doi.org/10.1109/mcd.2006.307271
Autor:
C.A.T. Salama, Il-Yong Park
Publikováno v:
IEEE Transactions on Electron Devices. 53:1909-1913
A buffered superjunction LDMOST (SJ-LDMOST) structure, which reduces substrate-assisted depletion effects, is proposed and the experimental implementation in a CMOS technology are presented. The proposed structure uses an N-buffer layer between the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7073ee5d39bccc1d15f8768c61640993
https://doi.org/10.1109/ted.2006.877007
https://doi.org/10.1109/ted.2006.877007
Autor:
Sotoudeh Hamedi-Hagh, C.A.T. Salama
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:1241-1252
A fully integrated phase-shifted (PS) transmitter is presented in this paper. The PS transmitter employs switching power amplifiers, operates without mixers, and provides an intermodulation distortion-free output spectrum, making it a suitable choice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d20278e9bec829dcef5aedef195c4f2
https://doi.org/10.1109/jssc.2004.831786
https://doi.org/10.1109/jssc.2004.831786
Publikováno v:
IEEE Transactions on Electron Devices. 51:1185-1191
A monolithic lateral double diffused MOSFET (LDMOST) based on the super junction (SJ) concept is proposed to significantly improve the device's on-state and off-state characteristics. The device structure features a split drift region made of two par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78dc08fc2ca2aa390bbb5a204ea29a84
https://doi.org/10.1109/ted.2004.829876
https://doi.org/10.1109/ted.2004.829876
Autor:
F. Vessal, C.A.T. Salama
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:238-241
This paper deals with the design and implementation of an 8-bit 2-Gsample/s folding-interpolating analog-to-digital converter (ADC) using a SiGe technology with a unity gain cutoff frequency f/sub T/ of 47 GHz. The high-speed high-resolution ADC has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4263f6176401343e6112a4872f8e3291
https://doi.org/10.1109/jssc.2003.820867
https://doi.org/10.1109/jssc.2003.820867
Autor:
S.G. Nassif-Khalil, C.A.T. Salama
Publikováno v:
IEEE Transactions on Electron Devices. 50:1385-1391
A super-junction lateral double diffused MOST (SJ-LDMOST) in silicon-on-sapphire technology, targeting power integrated circuits (PICs), is proposed, implemented and characterized. The proposed structure eliminates "substrate-assisted-depletion" effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b196e8fe6efb9c46a8cca9259af964f
https://doi.org/10.1109/ted.2003.813460
https://doi.org/10.1109/ted.2003.813460
Publikováno v:
IEEE Transactions on Electron Devices. 49:1462-1468
A novel trench lateral power MOSFET with a trench bottom source contact (TLPM/S) is proposed, fabricated, characterized, and compared with the equivalent TLPM with a trench bottom drain contact (TLPM/D). The TLPM/S is formed along the sidewalls of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5d4213eeb8cbedb536b9d0dc166fcf7
https://doi.org/10.1109/ted.2002.801434
https://doi.org/10.1109/ted.2002.801434
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 49:1566-1572
This paper presents the design and implementation of a 20-GHz-band differential voltage-controlled oscillator (VCO) using InP heterojunction-bipolar-transistor process technology. Aimed at 20- or 40-Gb/s fiber-optic applications, the design is based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6abd6cd74c836e497f485b0bc3d6eeee
https://doi.org/10.1109/22.942568
https://doi.org/10.1109/22.942568
Autor:
C.A.T. Salama, H. Djahanshahi
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:847-855
This paper describes the architecture and components of a high-speed clock and data recovery (CDR) circuit. Fully differential CMOS circuits are presented for an integrated physical layer controller of a 622-Mb/s (OC-12) system, although the design c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea2e73468e1419914ccbc44667d5a9f5
https://doi.org/10.1109/4.845188
https://doi.org/10.1109/4.845188