Zobrazeno 1 - 10
of 160
pro vyhledávání: '"C.A. Sébenne"'
Publikováno v:
Surface Review and Letters. :621-626
Initially clean, (2 × 1)-reconstructed Si(100) surfaces were exposed to NH 3, until saturation, at sequentially increased temperatures of up to 600°C. The resulting surfaces have been studied by low energy electron diffraction (LEED) and by photoem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f012cbbda4f7e0a4801c836e8dd14e5f
https://doi.org/10.1142/s0218625x01001579
https://doi.org/10.1142/s0218625x01001579
Publikováno v:
Applied Surface Science. 181:160-165
A single crystal film of layered GaSe epitaxially grown onto a Si(1 1 1) substrate has been partly intercalated at room temperature under ultra-high vacuum. Then it was vacuum annealed sequentially at increasing temperatures up to 850°C and studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8d3eb6ca10891fd4facc8a645fc773
https://doi.org/10.1016/s0169-4332(01)00376-2
https://doi.org/10.1016/s0169-4332(01)00376-2
Publikováno v:
Surface Review and Letters. :25-31
Chemically hydrogenated surfaces Si(111)(1×1)–H were exposed sequentially, at temperatures of up to 600°C, and to low pressures of H 2 O or NH 3. The interaction processes have been studied by low energy electron diffraction and by photoemission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30701e47926fba089236c13607020abf
https://doi.org/10.1142/s0218625x01000914
https://doi.org/10.1142/s0218625x01000914
Publikováno v:
Journal of Crystal Growth. 217:371-377
The molecular beam epitaxial growth of a film of the layered semiconductor GaSe onto a near perfect, hydrogenated, 1×1 ordered Si(1 1 1) substrate has been monitored at its initial steps by reflection high-energy electron diffraction at grazing inci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cef86e31e898a42d643105d28385e2ee
https://doi.org/10.1016/s0022-0248(00)00533-9
https://doi.org/10.1016/s0022-0248(00)00533-9
Publikováno v:
Surface Review and Letters. :1173-1178
Single crystal substrates of GaSe, a layered semiconductor with a 2 eV band gap, were epitaxially grown by MBE onto a Si(111)(1×1)–H substrate, forming a perfectly abrupt heterojunction. Controlled amounts of Cu were sequentially deposited onto th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8cfc9e840802673cf2c3d7676791e3
https://doi.org/10.1142/s0218625x9900130x
https://doi.org/10.1142/s0218625x9900130x
Publikováno v:
Journal of Physics: Condensed Matter. 11:6661-6668
Brillouin light scattering has been used to study the elastic properties of GaSe films of different thicknesses epitaxially grown on a hydrogen-terminated non-reconstructed Si(111) surface. Both Rayleigh and Sezawa guided acoustic modes have been rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88c2348b26879ebac98762a2af56f2a5
https://doi.org/10.1088/0953-8984/11/35/304
https://doi.org/10.1088/0953-8984/11/35/304
Publikováno v:
Surface Science. :415-419
Clean, 2×1-reconstructed Si(001) surfaces have been exposed, at room temperature, to an increasing flux of diatomic sulfur molecules as produced, within the ultra-high-vacuum vessel, by an all-solid silver sulfide electrolytic cell. The surface prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed06438aa2b91d87ab4201bcd5304407
https://doi.org/10.1016/s0039-6028(99)00450-1
https://doi.org/10.1016/s0039-6028(99)00450-1
Autor:
U. Schröder, C. Adler, Pasquale Pavone, C.A. Sébenne, A. Glebov, C. Eckl, J. P. Toennies, V. Panella
Publikováno v:
Physical Review B. 59:15772-15778
Surface-phonon-dispersion curves of the (001) surfaces of the GaSe and InSe films epitaxially grown on the hydrogen-terminated $\mathrm{Si}(111)(1\ifmmode\times\else\texttimes\fi{}1)$ surface have been investigated by high-resolution inelastic helium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::208beaac34470cafa7a7934785139160
https://doi.org/10.1103/physrevb.59.15772
https://doi.org/10.1103/physrevb.59.15772
Autor:
C.A. Sébenne, M. Eddrief, S. El Monkad, C Barchesi, F. Proix, K Amimer, A. Cricenti, A. Amokrane
Publikováno v:
Journal of Physics: Condensed Matter. 11:4303-4315
The valence band structure of a very thin film (about 6.4 nm thick) of the layered semiconductor InSe grown by molecular beam epitaxy onto a Si(111)1 ? 1-H substrate has been determined by angle-resolved ultraviolet photoelectron spectroscopy using s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e27ab6c878cb6154fe1c77b4dcab5cdd
https://doi.org/10.1088/0953-8984/11/22/302
https://doi.org/10.1088/0953-8984/11/22/302
Autor:
Mahmoud Eddrief, K. Amimer, F. Proix, C.A. Sébenne, S. El Monkad, V. Panella, A. Glebov, J. P. Toennies, J.-P. Lacharme
Publikováno v:
The European Physical Journal B. 5:919-926
At an InSe/Si(111) heterostructure, the transition between the cubic Si substrate and the layered compound InSe remains a problem. The surface structure of InSe films grown by molecular beam epitaxy on Si(111) substrates has been studied under ultra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d887d1a77f143937a3ec46b87537a14
https://doi.org/10.1007/s100510050518
https://doi.org/10.1007/s100510050518