Zobrazeno 1 - 10
of 23
pro vyhledávání: '"C.A. Mercado-Ornelas"'
Autor:
A. Belio-Manzano, J.L. Regalado-de la Rosa, C.A. Mercado-Ornelas, I.E. Cortes-Mestizo, L.I. Espinosa-Vega, Javier Alanis, E. Castro-Camus, Donato Valdez-Pérez, Yu. Kudriavtsev, V.H. Méndez-Garcia
Publikováno v:
Journal of Crystal Growth. 589:126680
Autor:
A. Belio-Manzano, Víctor Hugo Méndez-García, I.E. Cortes-Mestizo, L.I. Espinosa-Vega, C.A. Mercado-Ornelas
Publikováno v:
European Food Research and Technology. 245:1031-1036
In this work, were studied the aging spectral markers of three types of tequila: Blanco, Reposado, and Anejo (white, rested, and aged, respectively) by Raman spectroscopy with the aim of qualitatively assessing the aging state of tequilas. The sample
Autor:
A. Belio-Manzano, L.I. Espinosa-Vega, I.E. Cortes-Mestizo, C.A. Mercado-Ornelas, F.E. Perea-Parrales, S. Gallardo-Hernández, V.D. Compean-García, J.L. Regalado-de la Rosa, E. Castro-Camus, A. Yu Gorbatchev, Víctor H. Méndez-Garcia
Publikováno v:
Materials Science in Semiconductor Processing. 142:106486
Autor:
J.J. Cabrera-Montealvo, L.I. Espinosa-Vega, L.M. Hernández-Gaytán, C.A. Mercado-Ornelas, F.E. Perea-Parrales, A. Belio-Manzano, C.M. Yee-Rendón, A.G. Rodríguez, V.H. Méndez-García, I.E. Cortes-Mestizo
Publikováno v:
Thin Solid Films. 748:139147
Autor:
A. Del Río-De Santiago, I.E. Cortes-Mestizo, A.Yu. Gorbatchev, Máximo López-López, L.I. Espinosa-Vega, C.A. Mercado-Ornelas, Víctor Hugo Méndez-García, E. Eugenio-López
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 95:22-26
Different mechanisms of adatoms nucleation are studied for the self-assembling of InAs quantum dots (QDs) on smooth and nanoscale faceted GaAs surface morphologies. The experiments were performed on GaAs(100) and GaAs(631), and prior to the arrival o
Autor:
V.H. Méndez-García, A. Belio-Manzano, F.E. Perea-Parrales, L.I. Espinosa-Vega, I.E. Cortes-Mestizo, C.A. Mercado-Ornelas
Publikováno v:
Journal of Crystal Growth. 555:125959
The growth front stacking of bilayer quantum dot (BQD) InAs/GaAs heterostructures was studied by reflection high-energy electron diffraction (RHEED). The mean-field theory was employed to describe the quantum dots (QDs) nucleation, which was experime
Autor:
A. Belio-Manzano, I.E. Cortes-Mestizo, L.I. Espinosa-Vega, C.A. Mercado-Ornelas, F.E. Perea-Parrales, C. M. Yee-Rendón, Donato Valdez-Pérez, Víctor Hugo Méndez-García, G. Sánchez-Balderas
Publikováno v:
Journal of Applied Physics. 128:244302
By taking advantage of the GaAs (631) corrugation self-assembled on top of multi-quantum well heterostructure interfaces, the modulation of the confined state wave functions (eigenstates) has been achieved, attaining quasi-one-dimensional or fraction
Autor:
C.A. Mercado-Ornelas, Luis Zamora-Peredo, V.H. Méndez-García, I. Lara-Velázquez, L.I. Espinosa-Vega, D. García-Compean, E. Eugenio-López, C. M. Yee-Rendón, I.E. Cortes-Mestizo, A.Yu. Gorbatchev
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 124:114217
In this study, the quantum dots (QDs) self-assembly properties were affected by strain modulation. The strain of the GaAs (100) surface was modulated prior to the growth of InAs with the aim to tailor the size and distribution of self-assembled QDs.
Autor:
José Ángel Espinoza-Figueroa, C.A. Mercado-Ornelas, C. M. Yee-Rendón, Ángel Rodríguez, I.E. Cortes-Mestizo, F.E. Perea-Parrales, L.I. Espinosa-Vega, Víctor Hugo Méndez-García, Luis Zamora-Peredo
Publikováno v:
Thin Solid Films. 702:137969
Photoreflectance and ellipsometry are two very useful optical spectroscopy techniques employed to analyze the electronic band structure of semiconductors. Photoreflectance and ellipsometry spectra of gallium arsenide nitride (GaNAs) thin films on gal
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