Zobrazeno 1 - 10
of 98
pro vyhledávání: '"C.A. Carosella"'
Publikováno v:
Surface and Coatings Technology. 201:8448-8451
Au nanoparticles embedded in silica were prepared using electron beam evaporation of gold and silica together with 50 eV Ar+ bombardment followed by post-deposition annealing. Thin films were characterized using X-ray diffraction, X-ray reflectivity,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7df137df117255af214ea5beaed658a
https://doi.org/10.1016/j.surfcoat.2006.02.059
https://doi.org/10.1016/j.surfcoat.2006.02.059
Autor:
M. S. Osofsky, S. Schiestel, S. B. Qadri, C.A. Carosella, David L. Knies, James S. Horwitz, Chris Kendziora
Publikováno v:
Surface and Coatings Technology. :203-207
We studied the structural and superconducting properties of MgB 2 thin films, deposited by co-evaporation of magnesium and boron in the presence and absence of an ion beam followed by ‘in-situ’ and ‘ex-situ’ annealing. The MgB 2 films were ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df0373ce51a368dde5aaf59ec8420fd0
https://doi.org/10.1016/s0257-8972(02)00207-4
https://doi.org/10.1016/s0257-8972(02)00207-4
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 190:878-881
The out-of-plane c , and in-plane a , lattice parameters of wurtzite gallium nitride (GaN) films, grown on the [0 0 0 1] basal plane of sapphire have been determined and the impact of ion implantation having dose between 5×10 13 and 5×10 15 cm −2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2dd3e348944c3d0f75ddb931bd7ad53
https://doi.org/10.1016/s0168-583x(01)01189-2
https://doi.org/10.1016/s0168-583x(01)01189-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :305-308
We have investigated the effect of ion bombardment on the electrical properties and on the lattice parameter of InP. The depth positions of the defects formed after high-energy implantation at room temperature were determined. The evolution of the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b831811d9b083c2d2d34e79b49388e3
https://doi.org/10.1016/s0168-583x(00)00594-2
https://doi.org/10.1016/s0168-583x(00)00594-2
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:859-865
The photoresist developer AZ-400K, commonly used to remove AlN encapsulant layers on GaN crystalline films, is found to also etch certain as-grown GaN films. Even as-grown GaN films, which can not be etched in AZ-400K, however can be etched if amorph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c73a214e70c939f8a72a00c83f2e730
https://doi.org/10.1557/s1092578300005184
https://doi.org/10.1557/s1092578300005184
Publikováno v:
Materials Science and Engineering: B. :397-400
Ge nanoclusters in silica films were prepared either by electron beam evaporation of germanium and silica (PVD) or by evaporation and simultaneous ion bombardment (IBAD), both followed by post-deposition annealing. The two preparation methods are com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31a1c4a258f7d8596ad41ed3594996e
https://doi.org/10.1016/s0921-5107(99)00414-6
https://doi.org/10.1016/s0921-5107(99)00414-6
Publikováno v:
Materials Science and Engineering: B. :468-473
We have characterized the properties of Ge nanoclusters in silica films. The films are grown by physical vapor deposition (PVD) or ion-beam-assisted deposition (IBAD): by co-deposition of Ge and SiO 2 with and without the presence of an argon ion bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a8e0d52a05063b0933f713c7db8b654
https://doi.org/10.1016/s0921-5107(99)00413-4
https://doi.org/10.1016/s0921-5107(99)00413-4
Publikováno v:
Materials Science and Engineering: A. 253:212-220
The collision cascade, the fundamental event in ion-solid interactions, is responsible for the beneficial effects on thin films deposited by low energy ion beam assisted deposition (IBAD) or by energetic ion assisted deposition processes in general.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82cd7ac8a59993cd218db41172964cca
https://doi.org/10.1016/s0921-5093(98)00729-1
https://doi.org/10.1016/s0921-5093(98)00729-1
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :557-561
Gold nanocluster thin films (∼ 200 nm thickness) consisting of metal clusters ∼ 5 nm in size embedded in a matrix of Nb2O5 were deposited by ion beam-assisted deposition (IBAD) by coevaporation of Au and Nb with O2+ ion bombardment. The microstru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2bb6c4e7da875b377c623a2e7ccf534
https://doi.org/10.1016/s0168-583x(96)00990-1
https://doi.org/10.1016/s0168-583x(96)00990-1
Publikováno v:
Thin Solid Films. 298:33-38
The structure, mechanical, and chemical properties of boron–aluminum nitride thin films prepared by ion-beam-assisted deposition (IBAD) are reported. The ratio of N to Al+B as determined by Auger electron spectroscopy was consistently 1.0 in all fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac5092e12325223ab689ca29a8bf182f
https://doi.org/10.1016/s0040-6090(96)08884-0
https://doi.org/10.1016/s0040-6090(96)08884-0