Zobrazeno 1 - 10
of 20
pro vyhledávání: '"C.A. Billman"'
Autor:
I.-S. Lim, C.A. Billman, J. Makwana, Zhixu Zhou, P. Dahl, S. Tinkler, Y. Wang, M. Giovanetto, R.E. Paulsen, C. Reno, K.M. Klein, B. Bellamak, C.S. Kyono, D.W. Odle, S. Patel, Patrick M. Lenahan
Publikováno v:
IEEE Transactions on Electron Devices. 45:655-664
Process integration is approached from a built-in reliability perspective in order to develop a pre-metal inter-level dielectric (ILDO) module which may be integrated into a submicron CMOS process with embedded nonvolatile memory. The approach involv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba6c2a01f43b984bc5674728a223bbd7
https://doi.org/10.1109/16.661227
https://doi.org/10.1109/16.661227
Publikováno v:
Microelectronic Engineering. 36:271-274
We show, for the first time, that E'like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c84e935fd7cf955fb0518c8b94117566
https://doi.org/10.1016/s0167-9317(97)00062-2
https://doi.org/10.1016/s0167-9317(97)00062-2
Publikováno v:
IEEE Electron Device Letters. 24:218-220
We have found excellent electrical characteristics of epitaxially grown SrTiO/sub 3/ by molecular beam epitaxy (MBE) for silicon metal-insulator-semiconductor (MIS) gate dielectric application. For thin SrTiO/sub 3/ film, the equivalent oxide thickne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::377c8799c35c5032b269e3217a3268dc
https://doi.org/10.1109/led.2003.810886
https://doi.org/10.1109/led.2003.810886
Publikováno v:
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Developing reliable high voltage transistors requires consistent manufacturing of critical architectural parameters within the device over time and with various design configurations. Structural parameters that directly affect reliability are especia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ba0a170114e438a5e81fc4b947d1b6
https://doi.org/10.1109/asmc.2007.375110
https://doi.org/10.1109/asmc.2007.375110
Publikováno v:
2006 IEEE International Integrated Reliability Workshop Final Report.
Developing reliable high voltage transistors requires consistent manufacturing of critical architectural parameters within the device over time and with various design configurations. Structural parameters that directly affect reliability are especia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08fde2893f548302721ba7af3ed2fb3
https://doi.org/10.1109/irws.2006.305233
https://doi.org/10.1109/irws.2006.305233
Autor:
P. H. Tan, K. J. Hubbard, C.A. Billman, S. Völk, Darrell G. Schlom, R.R.M. Held, J. Lettieri, J. H. Haeni
Publikováno v:
Thin Films and Heterostructures for Oxide Electronics ISBN: 9780387258027
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::767447060cdfb9ab373971eafc86bb70
https://doi.org/10.1007/0-387-26089-7_2
https://doi.org/10.1007/0-387-26089-7_2
Publikováno v:
Digest. International Electron Devices Meeting.
We report on the electrical characteristics of epitaxially grown SrTiO/sub 3/ on p-Si[100] by molecular beam epitaxy (MBE). For 100 /spl Aring/-thick SrTiO/sub 3/ films, the equivalent oxide thickness (EOT) and leakage current density are 5.4 /spl Ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ffcf114a9d7d176bad5731694960be9
https://doi.org/10.1109/iedm.2002.1175996
https://doi.org/10.1109/iedm.2002.1175996
Publikováno v:
MRS Proceedings. 567
High K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01a97a2da57bb42980765191e96ecf61
https://doi.org/10.1557/proc-567-409
https://doi.org/10.1557/proc-567-409
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Akademický článek
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