Výsledky vyhledávání

Novel current re-distribution structure for improved and easy-to-manufacturing 24V LDMOS

Autor: Yan-Liang Ji, Cheng-Hua Lin, Keven Chang, H W Kao, C. W. Hu, C. H. Jan

Publikováno v: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

This paper presents a novel structure combined POLY-CAP and P+ Cut Edge which are implemented in s.LDMOS (switching LDMOS) to avoid trapping at active region. s.LDMOS is widely used in SMPS (Switch Mode Power Supply) which requires reliable lifetime

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::52b15df4cbd12a900ce34ab77b5556eb
https://doi.org/10.1109/ispsd.2018.8393661

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A 32 nm SoC With Dual Core ATOM Processor and RF WiFi Transceiver

Publikováno v: IEEE Journal of Solid-State Circuits. 48:91-103

An t 86 standard operating system compliant System-on-Chip (SoC) with a dual core ATOM processor and a custom interconnect fabric to enable modular design is presented. The 32 nm SoC includes integrated PCI-e Gen 2, DDR3, legacy I/O, voltage regulato

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd0b2f7ae64dfb70741acbc72df3c6da
https://doi.org/10.1109/jssc.2012.2222812

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Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms

Autor: Inanc Meric, Chang Hsu-Yu, Olac-Vaw Roman W, M. Chahal, K. W. Park, C.-H. Jan, S. Novak, N. L. Dias, P. Bai, S. Ramey, Nidhi Nidhi, Curtis Tsai, Chetan Prasad, Hafez Walid M, Ramaswamy Rahul

Publikováno v: 2016 IEEE International Reliability Physics Symposium (IRPS).

The transistor reliability characterization of a 14nm System-on-Chip (SoC) node optimized for low power operation is described. In-depth assessments of reliability and performance for Core and I/O devices are performed on Logic and SoC nodes, and cle

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::239baa5f31ceaaa074c1c5b8511c55c9
https://doi.org/10.1109/irps.2016.7574536

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A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for low power, high performance and high density SoC products

Publikováno v: VLSIC

A leading edge 14 nm SoC platform technology based upon the 2nd generation Tri-Gate transistor technology [5] has been optimized for density, low power and wide dynamic range. 70 nm gate pitch, 52 nm metal pitch and 0.0499 um2 HDC SRAM cells are the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ad023e07edda7779db811903bcb46fb
https://doi.org/10.1109/vlsic.2015.7231380

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Comparisons of the Glycosylation of a Monoclonal Antibody Produced under Nominally Identical Cell Culture Conditions in Two Different Bioreactors

Autor: Michael Butler, James C. Jamieson, David C. H. Jan, Jeremy P. Kunkel

Publikováno v: Biotechnology Progress. 16:462-470

The murine B-lymphocyte hybridoma cell line, CC9C10, was grown in serum-free continuous culture at steady-state dissolved oxygen (DO) concentrations of 10%, 50%, and 100% of air saturation in both LH Series 210 (LH) and New Brunswick Scientific (NBS)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f40c9ca7503b74942bdcfa39bc37f6cb
https://doi.org/10.1021/bp000026u

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The formation of ohmic and Schottky enhanced contacts to III–V compound semiconductors via the exchange mechanism: A combined thermodynamic and kinetic model

Autor: D. Swenson, Y. A. Chang, C.-H. Jan

Publikováno v: Journal of Applied Physics. 84:4332-4342

A methodology is presented for altering the electrical properties of contacts to III–V compound semiconductors through the use of controlled interfacial chemical reactions. The process by which this is accomplished has been termed the exchange mech

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::caba107d28e9ccae1411f55314a90387
https://doi.org/10.1063/1.368653

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Reliability studies of a 22nm SoC platform technology featuring 3-D tri-gate, optimized for ultra low power, high performance and high density application

Autor: Bruce Woolery, Abdur Rahman, J.-Y. Yeh, P. Bai, M. Jamil, K. Phoa, C.-H. Jan, Curtis Tsai, G. Curello, J. Hicks, M. S. Rahman, Joodong Park

Publikováno v: 2013 IEEE International Reliability Physics Symposium (IRPS).

Transistor reliability characterization studies are reported for a state of the art 22nm 3-D tri-gate HK/MG SoC technology with logic and HV I/O transistor architecture. TDDB, BTI and HCI degradation modes for logic and I/O transistors are studied an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9fd0814444461441fe012d7275e86cfe
https://doi.org/10.1109/irps.2013.6532105

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Phase equilibria of the Ga–Ni–As ternary system

Autor: Y. A. Chang, D. Swenson, D. B. Ingerly, C.-H. Jan

Publikováno v: Journal of Applied Physics. 80:543-550

Phase equilibria were investigated in the Ga–Ni–As ternary system, with particular emphasis on the regions of technological importance to Ni/GaAs electrical contacts. A 600 °C Gibbs isotherm was constructed using x‐ray‐diffraction analysis a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf24ec2b5aa358462309ead66ce9a964
https://doi.org/10.1063/1.362758

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Oxygenation of intensive cell-culture system

Autor: A. N. Emery, D. C.-H. Jan, M. Al-Rueai

Publikováno v: Applied Microbiology and Biotechnology. 43:1028-1033

The abilities of various methods of oxygenation to meet the demands of high-cell-density culture were investigated using a spin filter perfusion system in a bench-top bioreactor. Oxygen demand at high cell density could not be met by sparging with ai

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::128f2af3167f2a0e0ce8b74d0351aa77
https://doi.org/10.1007/bf00166920

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Peptone, a low-cost growth-promoting nutrient for intensive animal cell culture

Autor: A. N. Emery, Mohamed Al-Rubeai, D. C.-H. Jan, S. J. Jones

Publikováno v: Cytotechnology. 16:17-26

The effect of addition of peptone to serum-free and serum supplemented media for the growth of hybridoma cells in various systems was studied. Supplementation of defined medium with either proteose peptone or meat peptone resulted in significant incr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7f62429ebfb14d71bf0881664d21313
https://doi.org/10.1007/bf00761775

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