Zobrazeno 1 - 10
of 96
pro vyhledávání: '"C.-C. Chuo"'
Publikováno v:
Clinical radiology. 75(10)
AIM To evaluate contrast medium delivery protocols for the optimal enhancement profile of the aorta with both a reduced dose of radiation and contrast medium, called double-low computed tomography (CT) angiography (DLCTA). MATERIALS AND METHODS DLCTA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2faadddf99c2c57c21db1f0906f2bcb
https://pubmed.ncbi.nlm.nih.gov/32703542
https://pubmed.ncbi.nlm.nih.gov/32703542
Akademický článek
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Akademický článek
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Publikováno v:
physica status solidi (b). 241:2713-2716
This study develops a novel way to fabricate GaN LED (light emitting diode) chips with special shape to improve the optical output power. The thick and shaped GaN islands were first prepared on c-axis sapphire substrate by lithography and selective g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e0175fce0a14e7f260b69353510ecdf
https://doi.org/10.1002/pssb.200405033
https://doi.org/10.1002/pssb.200405033
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 9:708-715
We examine the issues of spontaneous and piezoelectric polarization discontinuity on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). A quench of band-edge emission from the cap GaN layer is observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::909c0d9a3cb52655b227be15b06a5aba
https://doi.org/10.1109/jstqe.2003.818855
https://doi.org/10.1109/jstqe.2003.818855
Autor:
K. U. Tseng, Chien-Chieh Lee, Jen-Inn Chyi, C. C. Chuo, Wen-Hao Chang, Tzu-Min Hsu, C. Y. Lai
Publikováno v:
physica status solidi (b). 228:77-80
In this paper, we present an experimental evidence for the piezoelectric field-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In 0.23 Ga 0.77 N/GaN p-i-n MQWs were studied by using modulation spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84380e65b1f036def9b06acea4c6e948
https://doi.org/10.1002/1521-3951(200111)228:1<77::aid-pssb77>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:1<77::aid-pssb77>3.0.co
Autor:
K. P. Lee, S. N. G. Chu, Brent P. Gila, A. P. Zhang, Jerry W. Johnson, Albert G. Baca, Hyun Cho, Xian-An Cao, Tzer-En Nee, G. T. Dang, Fan Ren, Jen-Inn Chyi, C. R. Abernathy, Stephen J. Pearton, C.-C. Chuo, Chien-Chieh Lee, C. Monier, J. Han
Publikováno v:
Materials Science and Engineering: B. 82:227-231
A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f5194d4eb94137301d6e5fa43c0beb
https://doi.org/10.1016/s0921-5107(00)00767-4
https://doi.org/10.1016/s0921-5107(00)00767-4
Autor:
G. T. Dang, Hyun Cho, Fan Ren, Stephen J. Pearton, K. P. Lee, A.P. Zhan, T.-Y. Nee, C.-C. Chuo, J.-I. Chyi
Publikováno v:
IEEE Transactions on Electron Devices. 48:407-411
The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19185a73aefbd622e9db3dcd9f3d40cc
https://doi.org/10.1109/16.906427
https://doi.org/10.1109/16.906427
Autor:
J.R. LaRoch, Fan Ren, Jerry W. Johnson, C. R. Abernathy, K. P. Lee, M. E. Overberg, C.-C. Chuo, Yong Jo Park, J.-I. Chyi, Chien-Chieh Lee, Stephen J. Pearton, Tzer-En Nee, Brent P. Gila, Sang-Yong Park
Publikováno v:
Solid-State Electronics. 45:405-410
GaN Schottky rectifiers have been fabricated on free-standing substrates and on epi/substrate structures. Forward turn-on voltages were as low as 3 V at 25°C. Reverse recovery was complete in Ω cm −2 for diodes with VB=450 V, producing a figure-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0906db94ef5b9f3c0a113a82077b0692
https://doi.org/10.1016/s0038-1101(01)00059-4
https://doi.org/10.1016/s0038-1101(01)00059-4
Autor:
Fan Ren, A. P. Zhang, Stephen J. Pearton, A. V. Govorkov, Tzer-En Nee, Chien-Chieh Lee, Jen-Inn Chyi, Alexander Y. Polyakov, N. B. Smirnov, C.-C. Chuo
Publikováno v:
Solid-State Electronics. 44:1591-1595
Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported for prototype p-i-n structures developed for high-power applications. It is observed that the diffusion length values in such d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f467d9ba247eeb3c8c0dfff0f30a480f
https://doi.org/10.1016/s0038-1101(00)00111-8
https://doi.org/10.1016/s0038-1101(00)00111-8