Zobrazeno 1 - 10
of 94
pro vyhledávání: '"C. d'Anterroches"'
Publikováno v:
Europhysics Letters (EPL). 75:455-460
We study theoretically the emergence of nanostructures in stressed multilayers. A non-linear amplitude expansion provides us with a simple argument on how the nanostructures emerging at the interfaces of the materials should behave. The criterion is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13f207d3b9fde6e0dfa101f994c0e73d
https://doi.org/10.1209/epl/i2006-10130-9
https://doi.org/10.1209/epl/i2006-10130-9
Autor:
Bertrand Nicolas, Odile I'Homme, Bernard Moreau, Gilbert Le Gall, Claire Lassudrie, C. d’Anterroches
Publikováno v:
Software Process: Improvement and Practice. 8:135-144
The needs and business goals of France Telecom R&D are centered around achieving enhanced customer satisfaction and greater competitiveness. These key management concerns become drivers that initiate software process improvement with goals of higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7294ab2488153cbb79b984249fb9207
https://doi.org/10.1002/spip.176
https://doi.org/10.1002/spip.176
Autor:
C. d'Anterroches, C. Bernardi
Publikováno v:
Journal of Non-Crystalline Solids. 187:369-373
Nitrided gate oxide layers have been characterized using electron energy loss spectroscopy coupled with a field emission gun electron microscope. It is demonstrated that quantitative analysis of nitrogen is possible with a high analytical spatial res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967075f7d7369e955e3f52102aaaaadd
https://doi.org/10.1016/0022-3093(95)00166-2
https://doi.org/10.1016/0022-3093(95)00166-2
Autor:
Jean-Michel Gérard, C. d’Anterroches
Publikováno v:
Journal of Crystal Growth. 150:467-472
Segregation processes entail severe deviations from the nominal composition profiles of heterostructures grown by molecular beam epitaxy for most semiconductor systems. It is, however, possible to compensate exactly these effects, as shown here for I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5500bdc48a0fe062a731f5212066c094
https://doi.org/10.1016/0022-0248(95)80255-b
https://doi.org/10.1016/0022-0248(95)80255-b
Publikováno v:
Journal of Applied Physics. 75:223-226
A study of the growth of thin (20–30 A) silicon overlayers on erbium silicide films epitaxially grown on Si(111), using the solid phase epitaxy technique under ultrahigh vacuum conditions was made. The silicon overlayers were characterized in situ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d01bff8ea9d264be2755455a152f9738
https://doi.org/10.1063/1.355887
https://doi.org/10.1063/1.355887
Autor:
C. d’Anterroches, Jean-Michel Gérard
Publikováno v:
Microscopy Microanalysis Microstructures. 5:213-236
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed61efb9393050bacb5068cb72863d6e
https://doi.org/10.1051/mmm:0199400503021300
https://doi.org/10.1051/mmm:0199400503021300
Publikováno v:
Journal of Crystal Growth. 127:536-540
We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolution electron microscopy pairs of identical AlAs/GaAs quantum wells, in which an InAs monolayer is inserted at nominally symmetric positions in the well,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c2635217e9d9554bf16f5f81f8f0d74
https://doi.org/10.1016/0022-0248(93)90678-p
https://doi.org/10.1016/0022-0248(93)90678-p
Publikováno v:
Microscopy Microanalysis Microstructures. 4:5-21
In recent years the semiconducting phase of iron silicide 03B2-FeSi2 has attracted interest. Promising applications of a great deal of 03B2-FeSi2/Si heterojunctions are reported in semiconductor technology due to the 0.89 eV direct band gap of 03B2-F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b0e7982cccdfc51a49f9deedc2f229
https://doi.org/10.1051/mmm:01993004010500
https://doi.org/10.1051/mmm:01993004010500
Autor:
Béatrice Guenais, Alain Poudoulec, Vincent Durel, C. d’Anterroches, Yves Ballini, André Guivarc'h
Publikováno v:
Microscopy Microanalysis Microstructures. 3:299-312
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::322e25439cdc4b890b02e54f38ed3c0c
https://doi.org/10.1051/mmm:0199200304029900
https://doi.org/10.1051/mmm:0199200304029900