Zobrazeno 1 - 10
of 39
pro vyhledávání: '"C. Zanotti Fregonara"'
Publikováno v:
Journal of Crystal Growth. :119-124
We report on the MOVPE of MgSe and ZnMgSe on (100)GaAs. Dimethylzinc:triethylammine, ditertiarylbutyl-selenide and bis(methylcyclopentadienyl)magnesium were used as Zn, Se and Mg sources, respectively. MgSe and ZnMgSe layers were grown either directl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed65261adbc2eb68c2439add76cec7a5
https://doi.org/10.1016/s0022-0248(00)00045-2
https://doi.org/10.1016/s0022-0248(00)00045-2
Autor:
Lesley M. Smith, Anna Maria Mancini, Nico Lovergine, C. Zanotti-Fregonara, Paola Prete, Simon A. Rushworth
Publikováno v:
Journal of Crystal Growth. 209:279-285
The low-temperature pyrolytic MOVPE growth of ZnSe, ZnS and ZnSxSe1-x is reported by using a novel class of VI-group precursors of the form R2X2 (where X = S, Se and R = ethyl, methyl) along with dimethylzinc:triethylammine. Dimethyldiselenide and di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e83350d9ad8016ed38b17f12059619f
https://doi.org/10.1016/s0022-0248(99)00555-2
https://doi.org/10.1016/s0022-0248(99)00555-2
Publikováno v:
Journal of Crystal Growth. 204:29-34
We report on the atmospheric pressure metalorganic vapour-phase epitaxy (MOVPE) growth of ZnS using diethyldisulphide (Et 2 S 2 ) as sulphur precursor in combination with electronic grade dimethylzinc : triethylammine (Me 2 Zn : Et 3 N). Et 2 S 2 is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75e687fffa226bdfcf54273dd8f6d54a
https://doi.org/10.1016/s0022-0248(99)00168-2
https://doi.org/10.1016/s0022-0248(99)00168-2
Publikováno v:
Micron. 31:269-275
This study reports on the microcharacterization of devices for optoelectronic and for microelectronic applications using low temperature ( T=5 and 77 K) spectrally resolved cathodoluminescence (SCL). The mechanisms leading to compositional inhomogene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::183a92378fc3dafee60928f3be72c23f
https://doi.org/10.1016/s0968-4328(99)00093-1
https://doi.org/10.1016/s0968-4328(99)00093-1
Autor:
Konstantin Vassilevski, Giancarlo Salviati, C. Zanotti-Fregonara, V. A. Dmitriev, M Mayer, M. Guzzi, Horst P. Strunk, Martin Albrecht, Nicola Armani, Y. G. Shreter, Yu. V. Melnik
Publikováno v:
Scopus-Elsevier
Defect related states and excitonic transitions in epitaxial GaN have been studied by combining cathodoluminescence and transmission electron microscopy. A series of deep revels with energies at about 2.4, 2.6 and 2.8 eV has been found by low tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec19120f59007291ce891a56632fdb28
https://doi.org/10.1002/(sici)1521-396x(199901)171:1<325::aid-pssa325>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199901)171:1<325::aid-pssa325>3.0.co
Autor:
Giancarlo Salviati, Karl Joachim Ebeling, M Mayer, A Pelzmann, Markus Kamp, W. Dorsch, Martin Albrecht, Horst P. Strunk, Silke Christiansen, C. Zanotti-Fregonara
Publikováno v:
Materials Science and Engineering: B. 43:296-302
We investigate the microstructural development during growth and the related electro-optical properties of gallium nitride (GaN) films deposited on (0001) sapphire substrates by gas source molecular beam epitaxy. We use transmission electron microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::713507981f4544e19b883050aa0e3d04
https://doi.org/10.1016/s0921-5107(96)01879-x
https://doi.org/10.1016/s0921-5107(96)01879-x
Autor:
Giancarlo Salviati, Laura Lazzarini, Lucia Nasi, M. Mazzer, C. Hardingham, D.B. Holt, C. Zanotti-Fregonara
Publikováno v:
Materials Science and Engineering: B. 42:204-207
Antiphase boundaries (APBs) are particularly crystallographically simple but technologically troublesome boundaries that tend to occur in profusion in GaAs grown epitaxially on (100) oriented substrates of Ge or Si. APBs were found to form only in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d01293c40a2e3ac3fa87b59847310645
https://doi.org/10.1016/s0921-5107(96)01952-6
https://doi.org/10.1016/s0921-5107(96)01952-6
Autor:
C. Zanotti-Fregonara, R. Grey, J. Barnes, Massimo Mazzer, K. W. J. Barnham, John P. R. David, Carsten Rohr, Paul Griffin, G. Haarpaintner, J.S. Roberts, E. Grunbaum, C. Olson, M. A. Pate
Publikováno v:
Journal of Applied Physics. 80:5815-5820
The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1−xAs multiquantum wells where x=0.155–0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dcfe56d9b48a94e8c739bd30195c693
https://doi.org/10.1063/1.363574
https://doi.org/10.1063/1.363574
We report on the atmospheric pressure MOVPE growth and characterisation of ZnSe, ZnS and ZnSxSe1-x, (0.095
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::f84a93c6e8f8f3b2f06f60fccf0ac50b
https://hdl.handle.net/11587/367629
https://hdl.handle.net/11587/367629
