Zobrazeno 1 - 7
of 7
pro vyhledávání: '"C. Win Ye"'
Autor:
Robert J. Hillard, C. Win Ye, John O. Borland, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
In this paper, a new method is described for determining the near surface electrically active dopant density (NSURF). This is a powerful new method that allows for the monitoring of Activation for USJ Structures. The technique uses a non‐penetratin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d197b97c78297e7a1c8067416d4fd5cd
https://doi.org/10.1063/1.2799380
https://doi.org/10.1063/1.2799380
Publikováno v:
AIP Conference Proceedings.
The formation of Ultra‐Shallow Junctions (USJ) for Source‐Drain extension regions is critical to device performance for current and future generation IC technology. Multiple process steps are involved in their formation: which can include pre‐a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de158e55b4537fb27a6a1d389e3b4d0b
https://doi.org/10.1063/1.2062970
https://doi.org/10.1063/1.2062970
Publikováno v:
The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
An accurate method to measure the four point probe (4pp) sheet resistance (R/sub S/) of USJ Source-Drain structures is described. The new method utilizes Elastic Material gate (EM-gate) probes to form non-penetrating contacts to the silicon surface.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e382c109e9bbec2187cbc3a38e30f7bd
https://doi.org/10.1109/iwjt.2004.1306768
https://doi.org/10.1109/iwjt.2004.1306768
Autor:
Robert G. Mazur, C. Win Ye, William J. Alexander, John Borland, M. C. Benjamin, Robert J. Hillard
Publikováno v:
MRS Proceedings. 810
An accurate method to measure the four point probe (4PP) sheet resistance (Rs) of USJ Source-Drain structures is described. The new method utilizes Elastic Material probes (EM- probe) to form non-penetrating contacts to the silicon surface. The probe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b00ad10492d6b4a83fbf70811efc4778
https://doi.org/10.1557/proc-810-c11.6
https://doi.org/10.1557/proc-810-c11.6
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:389
Accurate determination of resistivity and carrier density from spreading resistance (SR) data depends heavily on the quality of the SR probes. This quality can be assessed by the shape of the calibration curve, which primarily depends on the properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::314bfaa650863de01f61e7addeaf6764
https://doi.org/10.1116/1.591201
https://doi.org/10.1116/1.591201
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Conference
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