Zobrazeno 1 - 10
of 37
pro vyhledávání: '"C. Weulersse"'
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680f2fd29692b3605e48741e4efbf831
https://doi.org/10.1109/tns.2023.3256095
https://doi.org/10.1109/tns.2023.3256095
Autor:
M. Zerarka, O. Crepel, C. Weulersse, S. Morand, C. Binois, M. Mazurek, G. Vignon, L. Serrano, F. Coccetti
Publikováno v:
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b21b84f20ffda5cb29af6bdc66c8be
https://doi.org/10.1109/radecs50773.2020.9857695
https://doi.org/10.1109/radecs50773.2020.9857695
Publikováno v:
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65fc4bf68962062f95565a6f36834312
https://doi.org/10.1109/radecs50773.2020.9857698
https://doi.org/10.1109/radecs50773.2020.9857698
Publikováno v:
IEEE Transactions on Nuclear Science. 63:2201-2207
In linear devices, the strong impact of configuration on the SET characterization makes them very difficult to predict without using particle accelerators for each application. In this work, based on heavy ion data, we propose to simulate proton cros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dfc1f1cfe842f185622ba466c27e4e0
https://doi.org/10.1109/tns.2016.2541692
https://doi.org/10.1109/tns.2016.2541692
Publikováno v:
Microelectronics Reliability. 55:1491-1495
METIS, SIMPA and PROFIT are engineer tools based on heavy ion cross section for the assessment of Single Event Upsets induced by protons. Whereas SIMPA and PROFIT were based on analytical models; METIS has the particularity to rely on Monte-Carlo sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4764679deb53aca91b02914fc0df4f3b
https://doi.org/10.1016/j.microrel.2015.06.117
https://doi.org/10.1016/j.microrel.2015.06.117
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
IEEE Transactions on Nuclear Science. 60:2789-2796
This work investigates the capabilities of 14 MeV neutron tests to characterize the Single Event Upset sensitivity of digital devices. Analysis of secondary ions, experimental tests and extrapolation thanks to nuclear databases are performed to suppo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8418195aa97e83f1a64bba05008396c6
https://doi.org/10.1109/tns.2013.2241078
https://doi.org/10.1109/tns.2013.2241078
Autor:
Dan Alexandrescu, Anne-Lise Delirando, Florent Miller, Jeremy Galinat, C. Weulersse, Cyrille Delirando, N. Guibbaud, Patrick Trochei
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The use of 14 MeV neutron generators provides several strong advantages over spallation sources. This study aims at better defining the domain of applicability of this kind of facility for SEE characterization. Based on experiments using 14 MeV neutr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a11e7db4a23cf2bc0336f6edabc640
https://doi.org/10.1109/radecs.2016.8093157
https://doi.org/10.1109/radecs.2016.8093157
Autor:
N. Buard, S. Rocheman, C. Weulersse, Jean-Roch Vaillé, Frédéric Wrobel, Frédéric Saigné, T. Carriere
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.3146-3150. ⟨10.1109/TNS.2008.2006264⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.3146-3150. ⟨10.1109/TNS.2008.2006264⟩
Simulation of energy deposition in silicon by nuclear reactions is a crucial point for single event prediction tool development. In order to compare with the simulation of nuclear reactions, a silicon diode is irradiated by a 30 MeV and 63 MeV neutro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0448bc83a8b4341fb08cd639a116c345
https://doi.org/10.1109/tns.2008.2006264
https://doi.org/10.1109/tns.2008.2006264
Autor:
Dan Alexandrescu, C. Weulersse, Anne-Lise Beltrando, Cyrille Beltrando, Jeremy Galinat, Florent Miller, N. Guibbaud, Patrick Trochet
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
This paper aims at better defining the scope of applicability of a 14-MeV neutron source for single-event effect characterization. Based on an analysis of the neutron nuclear recoils and experiments on multiple devices (SRAM, SDRAM, FPGA) and feature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4298b2406b1e05d0c2741427216408bc
https://doi.org/10.1109/tns.2017.2660583
https://doi.org/10.1109/tns.2017.2660583