Zobrazeno 1 - 10
of 66
pro vyhledávání: '"C. Weissmantel"'
Autor:
C. Weissmantel
Publikováno v:
Journal of Vacuum Science and Technology. 18:179-185
The structure and properties of thin solid films deposited in vacuum can be influenced substantially if additional energy and momentum is provided to the growing layers by energetic, inert or film‐forming species. Various ion beam configurations fo
Publikováno v:
HTM Journal of Heat Treatment and Materials. 43:322-327
Publikováno v:
Thin Solid Films. 100:383-389
Investigations of the ion-activated formation of hard carbon (i-C) films have demonstrated that the condensation of energetic particles may result in the growth of deposits with unusual more or less amorphous microstructure. In this context the quest
Autor:
W. Scharff, C. Weissmantel
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:3160-3164
Silicon on insulator (SOI) structures were produced by recrystallization of polycrystalline silicon deposited on thermally grown SiO2 using either a single‐flash lamp pulse or light strip scanning. In the latter case of lateral zone melting, encaps
Publikováno v:
HTM Journal of Heat Treatment and Materials. 43:328-335
Autor:
C. Weissmantel, K. Hammer
Publikováno v:
Annalen der Physik. 497:432-444
Mit der Mikrowellen-Entladung bei Zyklotron-Resonanz ist eine effektive Plasma-Anregung moglich; es lassen sich Ionisationsgrade um 0,1 in Edel- und Reaktivgasen erreichen. Die Nutzung fur Ionenquellen bietet gegenuber der unselbstandigen Niederdruck
Publikováno v:
Physica Status Solidi (a). 100:553-557
Ion-plated boron nitride, which is a suitable hard coating material, is prepared with a wide range of deposition parameters and analysed by X-ray photoelectron Spectroscopy. Within a range of the atomic percent ratio N/B from 1 to 0.3 the N 1s and B
Publikováno v:
HTM Journal of Heat Treatment and Materials. 43:336-339
Autor:
R. Kögler, A. Wolf, J.-W. Erben, C. Hamann, J. Matthai, M. Heber, M. Voelskov, R. Klabes, W. Wieser, C. Weissmantel, W. Scharff
Publikováno v:
Thin Solid Films. 113:327-335
The growth of device-worthy silicon crystals on insulating substrates would offer a new type of semiconductor technology. Lateral epitaxial growth is demonstrated for several types of structures using island configurations of silicon deposited either
Publikováno v:
Thin Solid Films. 149:225-235
This paper deals with theoretical and experimental investigations of the thickness distribution of thin films deposited by evaporation under an inert support gas at various pressures. This approach is considered as a first step to describe the materi