Zobrazeno 1 - 10
of 46
pro vyhledávání: '"C. W. T. Bulle‐Lieuwma"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76709a2eeec708849dd3846085a9e392
https://doi.org/10.1201/9781003069621-87
https://doi.org/10.1201/9781003069621-87
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264e560a6c3ec61b521dc2ba8a67e08c
https://doi.org/10.1201/9781003069614-54
https://doi.org/10.1201/9781003069614-54
Publikováno v:
Applied Surface Science. 252:6597-6600
The occurrence and formation of black spots areas in PolyLED devices has been studied by time-of-flight SIMS (TOFSIMS). The composition, shape and position of the black spots is visualised by three-dimensional (3D)-TOFSIMS depth-profiling. It has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d3e7f0839bcd46c26b4b80f2a561483
https://doi.org/10.1016/j.apsusc.2006.02.103
https://doi.org/10.1016/j.apsusc.2006.02.103
Autor:
C. W. T. Bulle‐Lieuwma, Jan C. Hummelen, van Jkj Jeroen Duren, Xiaoniu Yang, J Joachim Loos, Raj René Janssen, A. B. Sieval
Publikováno v:
Applied Surface Science, 231-232(18), 274-277. ELSEVIER SCIENCE BV
Applied Surface Science, 231-232(1), 274-277. Elsevier
Applied Surface Science, 231-232(1), 274-277. Elsevier
The performance of bulk heterojunction solar cells (BHSC) strongly depends on the molecular morphology of the similar to100 nm thick spin cast photoactive films of the polymer/fullerene composites used. Using dynamic TOF-SIMS, we show here that spont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2b47881237657a3d773120ac43bbb55
https://doi.org/10.1016/j.apsusc.2004.03.251
https://doi.org/10.1016/j.apsusc.2004.03.251
Autor:
W.J.H. van Gennip, Pascal Jonkheijm, J.K.J. van Duren, J.W. Niemantsverdriet, René A. J. Janssen, C. W. T. Bulle‐Lieuwma
Publikováno v:
Applied Surface Science, 203-204, 547-550. Elsevier
Solar cells consisting of polymer layers sandwiched between a transparent electrode on glass and a metal top electrode are studied using dynamic time-of-flight secondary ion mass spectrometry (TOF-SIMS) in dual-beam mode. Because depth profiling of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0670803a364cd6ea283e7d145e83f9bb
https://doi.org/10.1016/s0169-4332(02)00756-0
https://doi.org/10.1016/s0169-4332(02)00756-0
Publikováno v:
Journal of Materials Research. 11:1653-1658
We examine the formation of Si1-xCx (x = 0.04–0.2) by means of CFy (y = 0,1,3) implantation in p-type Si, for application as a wide-bandgap emitter in a Si heterojunc-tion bipolar transistor. Upon implantation with 2.5 × 1016 CF+/cm2 at 45 keV, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0deb0c9259d648f8965865c70cde142c
https://doi.org/10.1557/jmr.1996.0207
https://doi.org/10.1557/jmr.1996.0207
Publikováno v:
Journal of Applied Physics. 74:4347-4353
Ion‐beam synthesis of β‐FeSi2 is demonstrated both in (111) Si and (001) Si substrates by 450 keV Fe ion implantation at elevated temperatures using a dose of 6×1017 Fe/cm2 and subsequent annealing at 900 °C. The structure of the buried layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::824ebf802dc5cb40bc15a496e7d137f4
https://doi.org/10.1063/1.354401
https://doi.org/10.1063/1.354401
Autor:
C. W. T. Bulle‐Lieuwma
Publikováno v:
Applied Surface Science. 68:1-18
Metal silicide films, which can be grown epitaxially on Si, have become of considerable interest both from an applied and a fundamental point of view. This is especially the case for CoSi2 because of its good electrical conductivity and high thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19a628d8149c831ba0e81bdddd5e8cab
https://doi.org/10.1016/0169-4332(93)90211-s
https://doi.org/10.1016/0169-4332(93)90211-s
Publikováno v:
Journal of Applied Physics. 71:2211-2224
CoSi2 layers formed by the thermal reaction of vapor‐deposited Co films on Si(100) substrates have been studied by transmission electron microscopy, and x‐ray diffraction. It is shown that first a layer of CoSi is formed between Co and Si. Only t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746aab3390765affebb0627c30443825
https://doi.org/10.1063/1.351119
https://doi.org/10.1063/1.351119
Autor:
D.E.W. Vandenhoudt, J.M.L. van Rooij-Mulder, Dirk J. Gravesteijn, M.J.J. Theunissen, C. W. T. Bulle‐Lieuwma, G. F. A. van de Walle
Publikováno v:
Journal of Crystal Growth. 118:125-134
The characteristic shape of voids in UHV-deposited amorphous Si layers is investigated by TEM analysis. This shape is determined by the deposition temperature and by subsequent UHV annealing leading to densified layers. Amorphous layers with voids sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::968a6471d05554cca1c86b434e4b3af6
https://doi.org/10.1016/0022-0248(92)90057-p
https://doi.org/10.1016/0022-0248(92)90057-p