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Failure analysis methodology on donut pattern failure due to photovoltaic electrochemical effect

Autor: S. P. Neo, J.C. Lam, G. B. Ang, S. L. Ting, C. W. Soo, H. H. Ma, C. Q. Chen, A. C. T. Quah, Z. H. Mai, D. Nagalingam

Publikováno v: Microelectronics Reliability. :255-260

This paper described a low yield case which resulted in a donut shape failing pattern. It also described a scenario where static fault localization is ineffective and a systematic problem solving approach based on symptoms, induction, hypothesis and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::04eddcb2500cec96f1fe7ebc20f79817
https://doi.org/10.1016/j.microrel.2017.07.036

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Study on the poly bump defect by TEM failure analysis

Autor: J. Lam, W. Liu, Eddie Er, C. W. Soo, J. S. Mun, S. P. Zhao, Bo Liu

Publikováno v: 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.

In this work we reported TEM failure analysis of an inline defect issue, nanosized poly bump defect formed during poly CVD process. Detailed TEM analysis was performed for the characterization of microstructure and composition of the nanosized defect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7094e34ac11b767f1366e215c913c9c7
https://doi.org/10.1109/ipfa.2015.7224383

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Akademický článek

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NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study

Autor: Y. L. Foo, R. Nath, M. Yeadon, Xiaoqing Pan, Dongzhi Chi, Chris Boothroyd, C. W. Soo, Haiping Sun, Y. B. Chen

Publikováno v: Applied Physics Letters. 86:201908

We use an ultrahigh-vacuum transmission-electron microscopy, equipped with an electron-beam evaporator directed at a heating stage in the pole piece, to follow the reaction pathway of Ni on Ge(001) substrate at 300 °C. Using reactive deposition, we

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7443686264e1577fb577c6ada4ae2727
https://doi.org/10.1063/1.1929100

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