Zobrazeno 1 - 10
of 56
pro vyhledávání: '"C. W. Magee"'
Autor:
C. Kooymans, C. W. Magee Jr., K. Waltenberg, N. J. Evans, S. Bodorkos, Y. Amelin, S. L. Kamo, T. Ireland
Publikováno v:
Geochronology, Vol 6, Pp 337-363 (2024)
This study assesses the effect of chemical abrasion on in situ mass spectrometric isotopic and elemental analyses in zircon. Chemical abrasion improves the U–Pb systematics of SIMS (secondary ion mass spectrometry) analyses of reference zircons, wh
Externí odkaz:
https://doaj.org/article/09012e3091e24575941f4b2fdf10cde9
Publikováno v:
Geochronology, Vol 5, Pp 1-19 (2023)
Estimations of the reproducibility of U–Pb ages from SHRIMP (Sensitive High-Resolution Ion MicroProbe) instruments are based on data from studies that are nearly 2 decades old. Since that time, refinement of analytical procedures and operational im
Externí odkaz:
https://doaj.org/article/d58f6438cb0044f2a4cb07ce02b8ffbb
Publikováno v:
Geoscientific Instrumentation, Methods and Data Systems, Vol 6, Pp 523-536 (2017)
The current limitation in the accuracy and precision of inter-element analysis in secondary ion mass spectrometry (SIMS) is the ability to find measurable quantities that allow relative differences in ionization and transmission efficiency of secon
Externí odkaz:
https://doaj.org/article/c639b5b977204e04b0fd6380b5ad5538
Autor:
C. W. Magee Jr., C. A. Norris
Publikováno v:
Geoscientific Instrumentation, Methods and Data Systems, Vol 4, Iss 1, Pp 75-80 (2015)
Alkali backgrounds in laser ablation ICP-MS analyses can be enhanced by electron-induced ionisation of alkali contamination on the skimmer cone, reducing effective detection limits for these elements. Traditionally, this problem is addressed by isola
Externí odkaz:
https://doaj.org/article/68c1b3e3b41540199102ae490aba2ba0
Publikováno v:
Geoscientific Instrumentation, Methods and Data Systems, Vol 6, Pp 523-536 (2017)
The current limitation in the accuracy and precision of inter-element analysis in secondary ion mass spectrometry (SIMS) is the ability to find measurable quantities that allow relative differences in ionization and transmission efficiency of seconda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a1612826bfa942b7b277bf684c3db2c
https://www.geosci-instrum-method-data-syst.net/6/523/2017/
https://www.geosci-instrum-method-data-syst.net/6/523/2017/
Autor:
C. W. Magee, A. M. Lanzillotto
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:983-986
The effect of electron stimulated desorption (ESD) during secondary ion mass spectrometry (SIMS) from BF+2 implanted SiO2 was investigated. We have quantitatively illustrated that the F+ depth profile is directly related to electron current density w
Autor:
C. W. Magee, R. S. Hockett, T. H. Büyüklimanli, I. Abdelrehim, J. W. Marino, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
Comparisons with SIMS analyses with nuclear techniques such as elastic recoil detection (ERD), nuclear reaction analysis (NRA), and high‐resolution Rutherford backscattering spectrometry (HR‐RBS), have shown that SIMS analyses without fully oxidi
Publikováno v:
13th European Microwave Conference, 1983.
We have investigated novel techniques for the fabrication of silicon IMPATTdiodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, transmission electron microscopy (TEM), unique secondary
Publikováno v:
Applied Physics Letters. 63:1258-1260
The combination of Z‐contrast scanning transmission electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy allows the most accurate determination, to date, of the As doping profile across the polycrystalline Si/S
Publikováno v:
Applied Physics Letters. 58:2258-2260
Electron transport in quantum well modulation δ doped on either the normal or the inverted side has revealed the major cause of the long‐puzzling inferior transport characteristics of the inverted interface. For growth conditions optimized for bes