Zobrazeno 1 - 8
of 8
pro vyhledávání: '"C. W. Leitz"'
Autor:
Mark S. Rodder, K. Matthews, Christopher J. Vineis, C. W. Leitz, M. Carroll, Vicky K. Yang, T. A. Langdo, Rick L. Wise, G. Braithwaite, J.G. Fiorenza, Puneet Kohli, R. Westhoff, Anthony Lochtefeld, John A. Carlin
Publikováno v:
Thin Solid Films. 513:300-306
We discuss a method for fabricating strained Si layers via deposition directly onto planarized relaxed SiGe virtual substrates, a process termed direct regrowth (DRG). We show that a trade-off exists between surface roughness and cleanliness of the S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f67ee7b40081cb0abfa22b4d7822d38c
https://doi.org/10.1016/j.tsf.2006.01.063
https://doi.org/10.1016/j.tsf.2006.01.063
Publikováno v:
Thin Solid Films. 513:78-83
Optimized parameters for measuring strained Si wafers by spectroscopic ellipsometry (SE) are presented. It is shown that SE sensitivity to the main wafer characteristics of interest–native SiO2 thickness, strained Si thickness, and composition of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7017156cfc49b62eca5862d155fda0dc
https://doi.org/10.1016/j.tsf.2006.01.023
https://doi.org/10.1016/j.tsf.2006.01.023
Autor:
Maksym Myronov, O. A. Mironov, T.J. Grasby, Richard J. H. Morris, Evan H. C. Parker, Eugene A. Fitzgerald, C. W. Leitz, R. Hammond, M T Currie, Terry E. Whall, David R. Leadley
Publikováno v:
Semiconductor Science and Technology. 19:L106-L109
Strained Ge p-channel heterostructures have been realized by hybrid-epitaxial growth. Strain-tuning Si0.4Ge0.6 virtual substrates were grown by ultra-high vacuum chemical vapour deposition and active layers were deposited by solid-source molecular be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e7de5aaeae53bd4698220d45f8d1251
https://doi.org/10.1088/0268-1242/19/10/l03
https://doi.org/10.1088/0268-1242/19/10/l03
Autor:
Isaac Lauer, Z. Y. Cheng, Mark Somerville, Anthony Lochtefeld, Mayank T. Bulsara, T. A. Langdo, Dimitri A. Antoniadis, Christopher J. Vineis, John A. Carlin, G. Braithwaite, C. W. Leitz, M. Erdtmann, J.G. Fiorenza, Matthew T. Currie
Publikováno v:
Solid-State Electronics. 48:1357-1367
SiGe-free strained Si on insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced capacitance and improved scalability of thin film silicon on insulator (SOI). We demonstrate fabrication
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c54b937051c4947674cf2e37624b456
https://doi.org/10.1016/j.sse.2004.02.013
https://doi.org/10.1016/j.sse.2004.02.013
Autor:
C. W. Leitz, G. Braithwaite, F. Singaporewala, V. K. Yang, T. A. Langdo, J. Yap, H. Badawi, Mark Somerville, John A. Carlin, J.G. Fiorenza, Anthony Lochtefeld, Mayank T. Bulsara, Matthew T. Currie
Publikováno v:
Semiconductor Science and Technology. 19:L4-L8
This paper studies the effect of the strained silicon thickness on the characteristics of strained silicon MOSFETs on SiGe virtual substrates. NMOSFETs were fabricated on strained silicon substrates with various strained silicon thicknesses, both abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f67b6d6972734e7bc567ce95695d03
https://doi.org/10.1088/0268-1242/19/1/l02
https://doi.org/10.1088/0268-1242/19/1/l02
Autor:
David M. Wilt, Steven A. Ringel, C. L. Andre, Eugene A. Fitzgerald, D.A. Scheiman, Mantu K. Hudait, Eric B. Clark, John A. Carlin, C. W. Leitz, Phillip P. Jenkins, Maria Gonzalez, Andrew A. Allerman
Publikováno v:
Progress in Photovoltaics: Research and Applications. 10:417-426
Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::509e06de3ddf014f2911bb549f86ef16
https://doi.org/10.1002/pip.448
https://doi.org/10.1002/pip.448
Autor:
Matthew T. Currie, C. W. Leitz, Dimitri A. Antoniadis, Eugene A. Fitzgerald, T. A. Langdo, Anthony J. Lochtefeld
Publikováno v:
Applied Physics Letters. 76:3700-3702
We show that pure Ge grown selectively on SiO2/Si substrates in 100 nm holes is highly perfect at the top surface compared to conventional Ge lattice-mismatched growth on planar Si substrates. This result is achieved through a combination of interfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dafe31f3422f37a45d6d755a92ddafac
https://doi.org/10.1063/1.126754
https://doi.org/10.1063/1.126754
Autor:
Eugene A. Fitzgerald, Matthew T. Currie, C. W. Leitz, D.A. Antoniadis, Gianni Taraschi, T. A. Langdo
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:2268
Surface channel strained Si metal–oxide–semiconductor field-effect transistors (MOSFETs) are a leading contender for future high performance complementary metal–oxide–semiconductor (CMOS) applications. The carrier mobility enhancement of thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb4428e79585c1d0112d505684415b4d
https://doi.org/10.1116/1.1421554
https://doi.org/10.1116/1.1421554