Zobrazeno 1 - 8
of 8
pro vyhledávání: '"C. W. Krueger"'
Publikováno v:
Journal of Crystal Growth. 169:51-60
A detailed computer model which predicts etch rates and spatial uniformity for chemical vapor etching of GaAs with CH3I in a vertical rotating-disk organometallic vapor phase epitaxy (OMVPE) reactor has been developed. Etch rate predictions compare f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a93db143f0771ec778f1a5c6180f420f
https://doi.org/10.1016/0022-0248(96)00278-3
https://doi.org/10.1016/0022-0248(96)00278-3
Publikováno v:
Journal of Crystal Growth. 153:81-89
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For GaAs samples masked with silicon nitride stripes that are wider than 30 tzm, the etch depth increased compared to unmasked samples, the magnitude of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73de243b4578864189a7554d89dc6240
https://doi.org/10.1016/0022-0248(95)00062-3
https://doi.org/10.1016/0022-0248(95)00062-3
Publikováno v:
Journal of Electronic Materials. 21:299-304
In experiments on the interrupted growth of GaAs by organometallic vapor phase epitaxy (OMVPE), we have compared the properties of two types of epilayers: those grown on CH3I-vapor-etched first epilayers and those grown on first epilayers that were e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5eca0ad2e9b18ed26db0941fabc5427
https://doi.org/10.1007/bf02660458
https://doi.org/10.1007/bf02660458
Publikováno v:
Applied Physics Letters. 60:1459-1461
With the objective of developing an improved process for in situ etching of GaAs‐based materials in organometallic vapor phase epitaxy reactors, GaAs wafers and AlxGa1−xAs epilayers have been etched with CH3I vapor in a horizontal reactor operate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37bebb5fd516338b9211da52f40a4e28
https://doi.org/10.1063/1.107270
https://doi.org/10.1063/1.107270
Autor:
K. Ishikawa, Maria Flytzani-Stephanopoulos, R.J. Higgins, R.L. Goldsmith, B.A. Bishop, C. W. Krueger, W. Jl
The sulfidation reaction kinetics of fine particles of zinc titanate and zinc oxide with H{sub 2}S were studied in order to test the potential of the sorbent injection hot-gas desulfurization process. Fine sorbent particles with diameter between 0.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523ced1837e9f90edebe07bbc8cc4798
https://doi.org/10.2172/464519
https://doi.org/10.2172/464519
Publikováno v:
SCM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::778e15152e1dfbf40ef2b1c6cf6ef01a
https://doi.org/10.1145/73337.73338
https://doi.org/10.1145/73337.73338
Publikováno v:
Thermodynamic Behavior of Electrolytes in Mixed Solvents ISBN: 9780841203020
Thermodynamic Behavior of Electrolytes in Mixed Solvents
Thermodynamic Behavior of Electrolytes in Mixed Solvents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e57c0711c0dfbb94f0b504660b5fbe6
https://doi.org/10.1021/ba-1976-0155.ch013
https://doi.org/10.1021/ba-1976-0155.ch013
Autor:
WILLIAM F. FURTER, ENRIQUE BEKERMAN, DIMITRIOS TASSIOS, DEREK JAQUES, J. E. BOONE, R. W. ROUSSEAU, E. M. SCHOENBORN, SHUZO OHE, EIZO SADA, TETSUO MORISUE, NORIO TSUBOI, M. A. GALAN, M. D. LABRADOR, J. R. ALVAREZ, JOHN A. BURNS, J. G. SLOAN, JOSEPH A. VAILLANCOURT, A. K. COVINGTON, K. E. NEWMAN, JAN J. SPITZER, H. P. BENNETTO, R. N. ROY, E. E. SWENSSON, G. LaCROSS, C. W. KRUEGER, CHARLES W. JONES, CLARENCE M. CUNNINGHAM, CHARANAI C. PANICHAJAKUL, EARL M. WOOLLEY, JACQUES E. DESNOYERS, OSAMU KIYOHARA, GÉRALD PERRON, LÉVON AVÉDIKIAN, C. DE VISSER, G. SOMSEN, R. P. T. TOMKINS, G. M. GERHARDT, L. M. LICHTENSTEIN, P. J. TURNER, CLAUDE TREINER, PIERRE TZIAS, EDWARD S. AMIS, GEORGE JAFFE, ROBERT A. STAIRS, T. J. M. POUW, W. J. BOVER, P. ZUMAN, Z. ADAMCOVÁ, SHIGEHARU KITO, YOSHITAKA ITO, A. J. BARKER, S. R. M. ELLIS, A. B. CLARKE