Zobrazeno 1 - 10
of 11
pro vyhledávání: '"C. W. Jurgensen"'
Autor:
R. R. Kola, G. R. Weber, Anthony E. Novembre, Lee Edward Trimble, George K. Celler, C. W. Jurgensen, J. Frackoviak
Publikováno v:
Applied Physics Letters. 59:3105-3107
We have constructed monolithic masks for proximity x‐ray lithography by forming 1 μm thick polycrystalline Si membranes directly on glass support frames. Finished masks are 78 mm in diameter and ∼5 mm thick, with the Si membrane spanning 27 mm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4e109272cfe162195889838e8dfeb64
https://doi.org/10.1063/1.105778
https://doi.org/10.1063/1.105778
Autor:
Steven D. Berger, James Alexander Liddle, L. Fetter, R. G. Tarascon, R. M. Camarda, C. W. Jurgensen, J. S. Kraus, H. A. Huggins, Reginald C. Farrow, R. R. Kola
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2175
This article discusses the relevant criteria for selecting alignment marks for projection electron lithography. The mark material, topography, and pattern layout are considered. Results from experiments and calculations indicate that there is a wide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f758020ded81050191884b6979824de
https://doi.org/10.1116/1.586451
https://doi.org/10.1116/1.586451
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2542
We describe the first commercial etching system based on a helicon ion source and characterize it for etching organic films in an oxygen plasma. This single wafer etching system achieves a throughput of at least 30 fully processed 5 in. wafers per ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b304dd17e8045d69e5cb8888deb5d095
https://doi.org/10.1116/1.586054
https://doi.org/10.1116/1.586054
Autor:
James Alexander Liddle, R. R. Kola, R. M. Camarda, L. Fetter, Reginald C. Farrow, H. A. Huggins, J. S. Kraus, C. W. Jurgensen, Steven D. Berger
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2780
The design considerations and performance requirements of an alignment and registration method for high‐throughput projection electron lithography are discussed. We have devised a mark detection system for a lithography tool employing the SCALPEL p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b6878f9e5b171459e1969a51b976cbf
https://doi.org/10.1116/1.586001
https://doi.org/10.1116/1.586001
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2133
As we enter the era of ultra‐large‐scale integrated circuit manufacture, plasma etching grows more important for fabricating structures with unprecedented dimensions. For feature sizes below 1 μm and aspect ratios (depth/width) much larger than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2c11fdef813fc308d851699837a0b46
https://doi.org/10.1116/1.586180
https://doi.org/10.1116/1.586180
Autor:
Steven D. Berger, C. W. Jurgensen, R. R. Kola, James Alexander Liddle, J. M. Gibson, H. A. Huggins, G. R. Weber
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3000
The choice of mask materials and fabrication route for a projection electron‐beam lithography system is subject to a variety of constraints. Some are encountered in most lithographic techniques, while some are unique to the scattering with regular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0621cb7349547657e23e7de23d972790
https://doi.org/10.1116/1.585357
https://doi.org/10.1116/1.585357
Autor:
C. W. Jurgensen
Publikováno v:
Journal of Applied Physics. 64:590-597
The effect of sheath collision processes on the energy and directionality of surface bombardment in reactive ion etching is modeled. Although the methods used are generally applicable, all the numerical examples are for a low‐pressure high‐freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1fb6c35fc75171d3870058fcf353dc7
https://doi.org/10.1063/1.341947
https://doi.org/10.1063/1.341947
Publikováno v:
The Journal of Chemical Physics. 84:649-653
The electronic spectra of TCNQ and TCNQ complexes has been investigated at high pressure up to 150 kbar. The observed pressure shifts are discussed in terms of intermolecular interactions. The results are also compared with available theoretical calc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44ef1e0dda3ea8071a4195d39c05328
https://doi.org/10.1063/1.450558
https://doi.org/10.1063/1.450558
Publikováno v:
The Journal of Chemical Physics. 83:6108-6112
The visible and infrared spectra of the 1 : 1 and 2 : 1 solid‐state complexes of hexamethylbenzene with tetracyanoethylene were investigated as a function of pressure up to 100 kbar. The degree of charge transfer is estimated as a function of press
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f6ef595ea4ee0ccf77453ac133e12e
https://doi.org/10.1063/1.449602
https://doi.org/10.1063/1.449602
Publikováno v:
Chemischer Informationsdienst. 17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8fde90700c248e0c692a7d783bf29e
https://doi.org/10.1002/chin.198615040
https://doi.org/10.1002/chin.198615040