Zobrazeno 1 - 10
of 44
pro vyhledávání: '"C. W. Hagen"'
Autor:
Sangeetha Hari, Johan A. Slotman, Yoram Vos, Christian Floris, Wiggert A. van Cappellen, C. W. Hagen, Sjoerd Stallinga, Adriaan B. Houtsmuller, Jacob P. Hoogenboom
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Super-resolution fluorescence microscopy can be achieved by image reconstruction after spatially patterned illumination or sequential photo-switching and read-out. Reconstruction algorithms and microscope performance are typically tested usi
Externí odkaz:
https://doaj.org/article/3f31cd4d184c44cc863fdb915eacefde
Publikováno v:
Micromachines, Vol 12, Iss 1, p 8 (2020)
High resolution dense lines patterned by focused electron beam-induced deposition (FEBID) have been demonstrated to be promising for lithography. One of the challenges is the presence of interconnecting material, which is often carbonaceous, between
Externí odkaz:
https://doaj.org/article/3eb5876e3151482f8fad297a73284782
Publikováno v:
Microelectronic Engineering, 224
To allow researchers to fabricate micro- and nano-devices on a small scale, without having to use complex cleanroom facilities, a single tool is proposed in which a variety of typical cleanroom techniques and processes is combined. This ‘cleanroom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5afa6f5a4b8d1772b2d23d4d5a455c4f
http://resolver.tudelft.nl/uuid:f4107128-bac3-48fa-a874-6f02a744ed71
http://resolver.tudelft.nl/uuid:f4107128-bac3-48fa-a874-6f02a744ed71
Publikováno v:
Microscopy and Microanalysis. 25:494-495
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995d322fc94e6adf8a63c153c64f0147
https://doi.org/10.1017/s1431927619003209
https://doi.org/10.1017/s1431927619003209
Publikováno v:
Microelectronic Engineering. 121:122-126
Graphene, a monolayer of carbon atoms arranged in a hexagonal lattice, is an interesting material because of its unique electronic properties. Electron Beam Induced Deposition (EBID) is an attractive direct-write technique to fabricate graphene devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce554dd832731e131b8f58eed4a62462
https://doi.org/10.1016/j.mee.2014.04.037
https://doi.org/10.1016/j.mee.2014.04.037
Publikováno v:
European Microscopy Congress 2016: Proceedings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d5875375efef6565f13c4538ca185e6
https://doi.org/10.1002/9783527808465.emc2016.5737
https://doi.org/10.1002/9783527808465.emc2016.5737
Publikováno v:
Journal of Microscopy. 221:159-163
Summary In this study, we demonstrated the use of electron-beam-induced deposition for synthesis of artificial two-dimensional crystals with an in situ scanning transmission electron microscope. The structures were deposited from W(CO)6 in an environ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d110f2e6bfee495ca12083c32ba06b1
https://doi.org/10.1111/j.1365-2818.2006.01555.x
https://doi.org/10.1111/j.1365-2818.2006.01555.x
Publikováno v:
Delft University of Technology
In a first study to analyze the feasibility of Electron Beam Induced Deposition (EBID) for creating certain patterns in advanced lithography, line patterns were fabricated on silicon wafers using EBID. The growth conditions were such that the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af4920454e168a7088ba1967ee1ac094
https://doi.org/10.1117/12.2046356
https://doi.org/10.1117/12.2046356
Publikováno v:
Microelectronic Engineering. 46:435-438
A microfabrication process is described to produce samples with a search pattern that enables finding a small area of interest with Scanning Tunnelling Microscopy (STM). This area is a 100 @mm square membrane, containing 0.6 - 3 @mm square windows wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24110885726024151fa5d972a050fb39
https://doi.org/10.1016/s0167-9317(99)00127-6
https://doi.org/10.1016/s0167-9317(99)00127-6
Publikováno v:
Microelectronic Engineering. 84:822-824
Hydrogen silsesquioxane (HSQ) is a high-resolution negative-tone inorganic resist with an established resolution below 10nm. Using 100keV electron beam lithography, we report the achievement of isolated 6nm wide lines in 20nm thick HSQ layers on sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbb66a588d0bd1530f20dfb7bf98d1d8
https://doi.org/10.1016/j.mee.2007.01.022
https://doi.org/10.1016/j.mee.2007.01.022