Zobrazeno 1 - 5
of 5
pro vyhledávání: '"C. W. Ebert"'
Autor:
C. W. Ebert, C. L. Reynolds, Keith R. Evans, Tanja Paskova, J. A. Grenko, Simon E. Lappi, Edward A. Preble, Mark Johnson, D.W. Barlage
Publikováno v:
Journal of Electronic Materials. 39:504-516
We report on the growth of Al0.25Ga0.75N/GaN heterostructures grown on low dislocation density vicinal surfaces of semi-insulating c-axis GaN substrates. Atomic force microscopy (AFM), photoluminescence (PL), cathodoluminescence (CL), high-resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a3c46c1b8e90ca4570747e74a22ea2
https://doi.org/10.1007/s11664-010-1153-0
https://doi.org/10.1007/s11664-010-1153-0
Autor:
K.F. Dreyer, John W. Stayt, John Michael Geary, R.E. Leibenguth, Liming Zhang, L.J.P. Ketelsen, W.A. Asous, M. Park, C.W. Lentz, Scott L. Broutin, R.L. Hartman, C. W. Ebert, Mark S. Hybertsen, L.J. Peticolas, C.L. Reynolds, J.E. Johnson, T.L. Koch, K.G. Glogovsky, K.K. Kamath, G.J. Przybylek, David Alan Ackerman
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:168-177
We report on a fully functional 2.5-Gb/s electroabsorption (EA)-modulated wavelength-selectable laser module meeting all long-haul transmission requirements for stability, chirp, power and linewidth over 20 channels on a 50-GHz grid. Based on a highl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2c5a83f8888bce69cd92b69d2af0601
https://doi.org/10.1109/2944.954126
https://doi.org/10.1109/2944.954126
Autor:
M. L. Gray, C. W. Ebert
Publikováno v:
Journal of Applied Physics. 71:3294-3299
Molecular beam epitaxial (MBE) layer heterostructures have been grown on GaAs wafers that received several different predeposition surface treatments. The electrical properties of the epitaxial structures have been correlated with the electrically ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b279a4542abc0babfe6fc6b7c8114bd7
https://doi.org/10.1063/1.350977
https://doi.org/10.1063/1.350977
Autor:
C. W. Ebert, Andrew D. Hanser, Mark Johnson, Tanja Paskova, Keith R. Evans, J. A. Grenko, C. L. Reynolds, Edward A. Preble
Publikováno v:
physica status solidi c. 6
We report on the growth of Al0.25Ga0.75N/GaN heterostructures on low dislocation density semi-insulating c-axis GaN substrates. Room temperature Hall mobilities up to 1805 cm2/Vs at sheet carrier densities of 0.77x1013 cm–2 have been measured. By v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20f9bdd3a76332dc6155700d708a43cc
https://doi.org/10.1002/pssc.200880907
https://doi.org/10.1002/pssc.200880907
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65d69ba9b6d954ddd2dafb2bd29fdbd9
https://doi.org/10.1116/1.587399
https://doi.org/10.1116/1.587399