Zobrazeno 1 - 5
of 5
pro vyhledávání: '"C. W. Bielawski"'
Publikováno v:
Active and Passive Electronic Components, Vol 2012 (2012)
In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristi
Externí odkaz:
https://doaj.org/article/e4cacb66b3d347798b435cad294ead1e
Autor:
D. Akhbari, Y Akkutlu, S. J. Altman, M Aman, B Aminzadeh, T. Arbogast, H. G. Bagaria, M Balhoff, S. J. Bauer, P. C. Bennett, J. Bhagmane, C. W. Bielawski, J. E. Bishop, S. L. Biswal, J. A. Bollinger, M. E. Bowden, V. Boyd, S. T. Broome, S. Bryant, T Bryndzia, D Butler, B Cardenas, M Cassidy, M Cha, M.A. Chan, C Chang, k Chaudhary, X. Chen, H Chen, Y Chen, G. P. Chini, C Choens, Kirsten Chojnicki, D H Chung, D. R. Cole, K. A. Cornell, P Craddock, L. J. Criscenti, L Cui, R T Cygan, H Daigle, S R Daniel, S M Davison, H Dehghanpour, M Delshad, W Deng, T A Dewers, D DiCarlo, J Dong, Z Duan, P Eichhubl, A S Elhag, C J Ellison, D N Espinoza, D Estep, J Evans, M F Fanizza, L M Foster, E L Foster, B W Fouke, B Ganis, M Geier, R Ghosh, K Gilbert, S Gomez, E J Guiltinan, P C Hackley, C D Hardy, D B Hart, N W Hayman, B He, J E Heath, L. Alberto Hernandez-Uribe, N J Hess, M A Hesse, G J Hirasaki, T A Ho, J Ho, S A Hosseini, M Hu, C S Huang, T Hueckel, C Huh, C H Hung, A G Ilgen, T. H. Illangasekare, D R Ingram, M Iqbal, A Islan, M Jammoul, K J Javier, E W Jensen, K Jessen, H Jiang, S Jin, V Joekar-Niasar, K P Johnston, J Jung, H Jung, M Juntunen, Q Kang, L Katz, P B Kelemen, C W Kelkar, E D Kelly, R A Ketcham, Y K Kharaka, A Kianinejad, J E Killough, S Kim, K Kim, M F Kim, M F Kirk, P Kitnidis, A A Kmetz, T J Kneafsey, P Kobos, X Kong, C Kotsmar, M Krafczyk, P G Krishnamurthy, J N Kruichak, A Kucala, K Kumar, A Kwok, L Lake, E S Larson, T E Larson, S Lee, Y J Lee, J Lee, W Lee, E A Leist, W Leung, J Y Leung, Y Leung, Y Liang, E L Lin, H P Lisabeth, R Liu, H Liu, Z C Liu, M Lotfollahi, L S Luo, J Lützenkirchen, B A Lyon, K Ma, J A Maisano, J R Major, M J Martinez, E Matteo, C McFadden, L K McGrath, S A McKenna, C J McNeece, T A Meckel, A Mehmani, Y Mehmani, E Merino, A E Metaxas, A Mikelić, T E Milner, M Mirzaei, E Moaseri, P S Mozley, E M Myshakin, K B Nakshatrala, B M Neilson, P Newell, Q P Nguyen, D R Noble, J A Noguera, J E Olson, C R Omelon, M Oostrom, M R Ortiz, S Ovaysi, M L Parks, A Pasquali, L E Pastora, G Pencheva, K D Pennell, M Perego, W A Perkins, M Person, A H Peterman, R T Petersen, S Phan, D Q Pike, V Prigiobbe, M Prodanovic, L J Pyrak-Nolte, H Quintanilla, S Raduha, C L Rakowski, M J Ramos, J E Reber, P R Reddy, R A Requeiro, M C Richmond, A G Rinehart, C M Roach, M Roberts, K D Romanak, V N Romanov, P Romero-Gomez, R S Ruoff, R A Sanford, J C Santamarina, E F U Santillan, K J Sathaye, T D Scheibe, M Schonherr, M K Sen, S Senthilnathan, J A Serkowski, M Shafiei, T M Shanahan, S Shao, B Sheehan, A H El Sheikh, Z Shi, I A Shovkun, G Singh, R Singh, D T Slottke, S Sobolik, S Srinivasan, G Stadler, P H Stauffer, D F Stockli, J Stormont, E A Strack, T J Strathmann, R Suarez-Rivera, Z Sun, Y Sun, A Sun, T Sun, J D Sweetser, M Reda Taha, H Tang, Y Tang, A M Tartakovsky, G D Tartakovsky, R Tavakoli, S Tavener, C M Tenney, D Thomassen, X Tian, V Tran, N Trask, L Trevisan, T M Truskett, T T Tsotsis, D Z Turner, E E Ureña-Benavides, A J Valocchi, M Vohralik, L Wang, W Wang, B Wang, W H Wang, Y Wang, B Wen, C J Werth, M Wheeler, D White, T Wick, T W Wietsma, T Wildey, A Wilson, Jennifer Wilson, W Wolfe, A J Worthen, H Xiao, Z Xue, G Xue, C Yang, X Yang, H Yoon, K Y Yoon, I A Yotov, A Youl, K Youl, G Yu, L Zhang, C Zhang, R Zhang, T Zhen, W Zhu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2dcc9f124cafe0f90ca81553a2a46d9
https://doi.org/10.2172/1503847
https://doi.org/10.2172/1503847
Autor:
J F, Arambula, R, McCall, K J, Sidoran, D, Magda, N A, Mitchell, C W, Bielawski, V M, Lynch, J L, Sessler, K, Arumugam
Publikováno v:
Chemical science. 7(2)
Ferrocene containing
Autor:
Keun Woo Park, Domingo Ferrer, Todd W. Hudnall, C. W. Bielawski, J. Price, Jung Hwan Yum, Sanjay K. Banerjee, Gennadi Bersuker, Michael C. Downer, T. Akyol, Ming Lei, Edward T. Yu, J.C. Lee
Publikováno v:
IEEE Transactions on Electron Devices. 58:4384-4392
In a previous study, we demonstrated that the BeO film grown by atomic layer deposition (ALD) on Si and III-V metal-oxide-semiconductor devices has excellent electrical and physical characteristics. In this paper, we discuss the physical and electric
Autor:
B. C. Norris, C. W. Bielawski
Publikováno v:
Synfacts. 2010:0774-0774