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pro vyhledávání: '"C. V. J. M. Chang"'
Autor:
J. C. N. Rijpers, C. V. J. M. Chang
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:536
The reactive ion etching of AlInGaP and GaAs with a gas mixture of SiCl4, CH4, and Ar is examined. Process parameters such as gas flow composition and radio‐frequency power input are varied. The CH4 flow variation in particular has a substantial ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4556b84450465f0a2300386e6a01a4f7
https://doi.org/10.1116/1.587034
https://doi.org/10.1116/1.587034
