Zobrazeno 1 - 10 of 50 pro vyhledávání: '"C. Trouiller"'
1
Experimental and Numerical Study on Silicon Die Strength and its Impact on Package Reliability
Autor: J-E. Luan, E. Gourvest, I. Raid, C. Trouiller, S. Gallois-Garregnot, O. Robin
Publikováno v: 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
Semiconductor devices become more complicated and the need for the use of semiconductor chips in portable products increases, the need for thinner chips and packages becomes greater. It brings great challenges of processing, handling, and understandi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1590ff66ee8f800584d68e2f3f7723c5
https://doi.org/10.1109/eptc.2018.8654413
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2
An analyis of trace metal contaminants on silicon surface by VPD-ToF-SIMS and VPD-SIMS: towards 1E6-1E7at/cm2 detection limits
Autor: C. Trouiller, Marc Juhel, Cyril Arsac, Stephanie Couvrat, Denis Guiheux, Catherine Grosjean, Nathalie Drogue
Publikováno v: Surface and Interface Analysis. 43:582-585
VPD-SIMS and VPD-TOFSIMS are used to detect ultra low level of metallic contaminants on silicon wafer surface. The combination of Secondary Ion Mass Spectrometry (SIMS) high sensitivity and Vapor Phase Decomposition (VPD) is capable to provide quanti
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1867690b2033c68dbb2fece4be724c26
https://doi.org/10.1002/sia.3428
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3
Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties
Autor: Jean-Luc Autran, B. Pelletier, Marc Juhel, Pierre Morin, C. Trouiller, D. Beucher
Publikováno v: Materials Science and Engineering: B. :252-255
The interactions occurring between the pMOSFET sidewall spacers and the shallow junctions underneath can be detrimental for the transistor performance. In fact, a significant part of the p-type LDD boron may out-diffuse into the spacer oxide layer du
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f4e09486eb4c66698782b457e2552f0b
https://doi.org/10.1016/j.mseb.2008.09.025
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4
Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates
Autor: C. Trouiller, Didier Léonard, Marc Juhel, L.F.Tz. Kwakman, C. Wyon, X. Ravanel
Publikováno v: Applied Surface Science. 255:1415-1418
Reliability and yield of nano-electronic devices can be seriously affected by the presence of surface contamination, even at low concentration. The microelectronics industry is, thus, in need for a quantitative, highly sensitive surface analysis tech
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75adc4e2c34b0480f882aa5bfbc93c2b
https://doi.org/10.1016/j.apsusc.2008.06.045
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5
Nitrogen impurity effects on nickel silicide formation at low temperatures – New 'nitrogen co-plasma' approach
Autor: C. Trouiller, B. Imbert, S. Delmedico, R. Beneyton, S. Zoll, Olivier P. Thomas, Magali Gregoire
Publikováno v: Microelectronic Engineering. 85:2005-2008
Nickel based silicide films were prepared by annealing nickel-platinum layers deposited on n doped Si substrates. We report on the evolution of the phase formation and the redistribution of contaminants on blanket wafers during silicide formation as
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::876f2904266a16ad0d3a4791ca963e1b
https://doi.org/10.1016/j.mee.2008.04.021
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6
Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time-of-flight secondary ion mass spectrometry using a polyatomic ion source
Autor: C. Wyon, C. Trouiller, Marc Juhel, Didier Léonard, L. F. T. Kwakman, X. Ravanel
Publikováno v: Surface and Interface Analysis. 40:734-737
Recent time-of-flight secondary ion mass spectrometry (ToF-SIMS) studies using primary cluster ion sources such as Au n + , SF n + , Bi n + or C 60 + have shown polyatomic ions to be more appropriate for the detection of high mass molecular secondary
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e61c035b4be6a01b655c6a47e42daa73
https://doi.org/10.1002/sia.2757
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10
Elimination of Post Cu-CMP Watermark by Optimizing Post CMP Clean to Control Cu Dissolution
Autor: Sébastien Petitdidier, M. Mellier, C. Trouiller, Marc Juhel, Catherine Euvrard
Publikováno v: ECS Transactions. 11:387-394
The continuous decrease of the effective dielectric constant of the dielectric stack forces Cu-CMP to either directly polish the low-k films or completely remove a higher-k protective cap layer on top of it. The exposure of hydrophobic low-k films to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8cf25bee3f8c05eeb22814cdac24e45
https://doi.org/10.1149/1.2779402
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