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Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c148763b2f6ec02f7030ebeebb6d3e3
https://doi.org/10.1201/9781003069621-8
https://doi.org/10.1201/9781003069621-8
Autor:
C. Tramontana, J. Soterakis, D. Merante, L. Giglio, J.M. Golbin, C. Shannon, P. O'Shaughnessy
Publikováno v:
B48. CRITICAL CARE: MEASURE FOR MEASURE - QUALITY IMPROVEMENT AND IMPLEMENTATION OF BEST PRACTICE.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43da574c25ca0759ad340bfd0991466d
https://doi.org/10.1164/ajrccm-conference.2019.199.1_meetingabstracts.a3412
https://doi.org/10.1164/ajrccm-conference.2019.199.1_meetingabstracts.a3412
Publikováno v:
Physical Review B. 45:13400-13406
Heteroepitaxial growth of compound semiconductors on Si surfaces is strongly affected by the chemical bonding at the interface. In this work, the growth of ZnSe on Si(100) surfaces by molecular-beam epitaxy has been investigated primarily by transmis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62edab9a011cb25b02f64027d1faf603
https://doi.org/10.1103/physrevb.45.13400
https://doi.org/10.1103/physrevb.45.13400
Autor:
G. A. N. Connell, D. B. Fenner, J. B. Boyce, A. M. Viano, Fernando Ponce, J. C. Tramontana, David K. Fork
Publikováno v:
Journal of Applied Physics. 69:2176-2182
Thin films were deposited by pulsed uv‐laser (ablation) deposition of Y1Ba2Cu3O7−x (YBCO), and composite zirconia and yttria targets onto silicon wafers. These films were analyzed to ascertain the chemical and physical structure of the film inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bb66446dfccc8f120b50b8c522b1621
https://doi.org/10.1063/1.348746
https://doi.org/10.1063/1.348746
Autor:
A, Di Grande, V, Giustolisi, V, Tabita, C, Giuffrida, S, Riccobene, C, Le Moli, V, Cannone, E, Maira, G, Narbone, F, Nigro, R, Paradiso, C, Tramontana
Publikováno v:
La Clinica terapeutica. 159(3)
Rhabdomyolysis is an acute skeletal muscle disorder characterized by altered integrity of the cell membranes of muscle fiber cells. It can be related to a variety of factors: muscular trauma, muscle enzyme deficiencies, infections, drugs, toxins, alc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::843df85350756eb796ab52aeb924d306
https://pubmed.ncbi.nlm.nih.gov/18594746
https://pubmed.ncbi.nlm.nih.gov/18594746
Autor:
David P. Bour, Fernando Ponce, J. C. Tramontana, Robert L. Thornton, F. J. Endicott, David W. Treat
Publikováno v:
Applied Physics Letters. 65:2696-2698
We have investigated both analytically and experimentally the mechanisms for defect formation during interdiffusion of GaAs and GaInP. We find that the analytical model predicts a critical thickness below which defects are not produced during this hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea6d68bd7a3ea78ebb8884d9120658b
https://doi.org/10.1063/1.112609
https://doi.org/10.1063/1.112609
Publikováno v:
Applied Physics Letters. 61:195-197
ZnSe has been used as an interlayer between Si substrates and GaAs layers in molecular beam epitaxial growth of GaAs on Si. It is found that thin GaAs layers are much more uniform and have fewer defects when grown on ZnSe interlayers than when they a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8221f054991751484ebb435849cb10
https://doi.org/10.1063/1.108216
https://doi.org/10.1063/1.108216
Autor:
Julia M. Phillips, T. H. Geballe, Fernando Ponce, J. C. Tramontana, Nathan Newman, David K. Fork
Publikováno v:
Applied Physics Letters. 58:2432-2434
The use of silicon on sapphire (SOS) as a substrate for YBa2Cu3O7−δ allows the growth of thick (∼4000 A) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee6cd296c55a36309e99e7c6914f791e
https://doi.org/10.1063/1.104864
https://doi.org/10.1063/1.104864
Publikováno v:
Applied Physics Letters. 58:2294-2296
Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (−22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e6044270fb7aa528b7ab61e24f7495f
https://doi.org/10.1063/1.104903
https://doi.org/10.1063/1.104903