Zobrazeno 1 - 10
of 136
pro vyhledávání: '"C. Tatsuyama"'
Publikováno v:
Journal de Physique IV (Proceedings). 132:141-145
It have been reported that in deposition onto the Si(111)-(7 x 7) reconstruction under suitable conditions resulted in the formation of the ordered In nanocluster array structure. Such ordered array structures of metal nanoclusters are promising mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280052cc754f848ae6443a31982e1c46
https://doi.org/10.1051/jp4:2006132028
https://doi.org/10.1051/jp4:2006132028
Publikováno v:
Applied Surface Science. 237:99-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa2190d22f9c179535c3f1bf353b400
https://doi.org/10.1016/s0169-4332(04)01031-1
https://doi.org/10.1016/s0169-4332(04)01031-1
Publikováno v:
Surface Science. 448:1-10
Thin GaS films were deposited on B-doped diamond (as-grown) and on oxygen-annealed B-doped diamond (O-ann.) films grown by plasma-assisted chemical vapor deposition on p+-type Si(001) substrate and the interface formation has been characterized by Au
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e581eb52de1519867e07847800a70d03
https://doi.org/10.1016/s0039-6028(99)01184-x
https://doi.org/10.1016/s0039-6028(99)01184-x
Publikováno v:
Journal of Applied Physics. 86:3213-3217
We have studied the formation of a high-quality SrTiO3 (STO) film on a Si surface which is an appropriate buffer film for fabricating high-Tc superconductor devices on Si by molecular beam epitaxy. The STO films with thicknesses of 1300–6700 A are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95ecd0a75867123013193a4cbf60706d
https://doi.org/10.1063/1.371192
https://doi.org/10.1063/1.371192
Publikováno v:
Journal of Applied Physics. 85:4003-4009
The growth of GaS films on GaAs(001) surfaces by using thermal evaporation of layered-compound GaS has been investigated by Auger electron spectroscopy, low-energy electron-loss spectroscopy (LEELS), x-ray photoemission spectroscopy (XPS), and atomic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3e43ae349cbcb01d9cd896027749b3
https://doi.org/10.1063/1.370304
https://doi.org/10.1063/1.370304
Publikováno v:
Thin Solid Films. 237:282-290
Structural quality of (SimGen)N superlattices grown on an Si(001)−2×1 surface at different temperatures (300–500 °C) by molecular beam epitaxy was characterized by reflection high energy electron diffraction, X-ray diffraction, Raman scattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d5827cad6c13469e67034abb59da51
https://doi.org/10.1016/0040-6090(94)90274-7
https://doi.org/10.1016/0040-6090(94)90274-7
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642639937
Springer Proceedings in Physics
Springer Proceedings in Physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5770ce5eed395556b876ee92d1f3076
https://doi.org/10.1007/978-3-642-59484-7_148
https://doi.org/10.1007/978-3-642-59484-7_148
Publikováno v:
Journal of Materials Science: Materials in Electronics; Apr2005, Vol. 16 Issue 4, p225-228, 4p
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 45:123-132
The optical absorption, fluorescence (FL) and Raman scattering (RS) have been observed for dye molecules rhodamine 6G (R6G) and fuchsin basic (FB) adsorbed on evaporated Ag films. The absorption peak, due to the plasma resonance characteristic to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faba2626d832cdb1d64108f83f8faa6e
https://doi.org/10.1016/0368-2048(87)80060-9
https://doi.org/10.1016/0368-2048(87)80060-9
Publikováno v:
Physica Status Solidi (a). 43:685-693
Photoluminescence of GaSe is measured between 4.2 and about 40 K. The spectra of many samples are classified into three types. The first type has only one broad peak at about 2.04 eV, and the second type has two sharp lines at 2.096 and 2.088 eV foll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34093651c7f3c30a69e356fa1e25e4eb
https://doi.org/10.1002/pssa.2210430241
https://doi.org/10.1002/pssa.2210430241