Zobrazeno 1 - 4
of 4
pro vyhledávání: '"C. T. Fox"'
Autor:
S. Kipps, T K Bahu, C. T. Fox, J. A. Edge, David B. Dunger, H. A. W. Neil, A. H. Knight, N. P. Mann, R. S. Brown, Ken K. Ong, N. K. Griffin, Fran Ackland, H. Simpson
Aims To determine the efficacy and patient perception of various transfer procedures from paediatric to adult diabetes services. Methods Comparison between four districts in the Oxford Region employing different transfer methods, by retrospective stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89989cbacff36904c76035ed4b8f3b25
https://ora.ox.ac.uk/objects/uuid:d70c8b46-9722-4fda-a6de-d40806b1d3ae
https://ora.ox.ac.uk/objects/uuid:d70c8b46-9722-4fda-a6de-d40806b1d3ae
Autor:
C. Elias, P. Valvin, T. Pelini, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, S. V. Novikov, B. Gil, G. Cassabois
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Insulating hexagonal boron nitride (hBN) is theoretically expected to undergo a crossover to a direct bandgap in the monolayer limit. Here, the authors perform optical spectroscopy measurements on atomically thin epitaxial hBN providing indications o
Externí odkaz:
https://doaj.org/article/37ee1074b78f488f83916006346b401a
Autor:
G. Cassabois, G. Fugallo, C. Elias, P. Valvin, A. Rousseau, B. Gil, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, M. Lazzeri, A. Segura, S. V. Novikov
Publikováno v:
Physical Review X, Vol 12, Iss 1, p 011057 (2022)
The light-matter interaction in bulk semiconductors is in the strong-coupling regime with hybrid eigenstates, the so-called exciton polaritons and phonon polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc
Externí odkaz:
https://doaj.org/article/da4eed7dc9d1474b89bea97bb5ddbc91
Autor:
J. D. Albar, A. Summerfield, T. S. Cheng, A. Davies, E. F. Smith, A. N. Khlobystov, C. J. Mellor, T. Taniguchi, K. Watanabe, C. T. Foxon, L. Eaves, P. H. Beton, S. V. Novikov
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic
Externí odkaz:
https://doaj.org/article/3129cbf984284527ac9876d7d8fbcca0