Zobrazeno 1 - 10
of 34
pro vyhledávání: '"C. Swiatkowski"'
Publikováno v:
Applied Physics A. 103:43-50
The selective ablation of thin (∼100 nm) SiO2 layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decreas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d72c5359de8d1e8bc562542460f090a
https://doi.org/10.1007/s00339-011-6352-x
https://doi.org/10.1007/s00339-011-6352-x
Autor:
C. Swiatkowski, M. Kunst
Publikováno v:
Applied Physics A Materials Science & Processing. 61:623-629
Contactless transient photoconductivity measurements of intrinsic a-Si: H films in the microwave frequency range are presented. The measurements are evaluated quantitatively and the electron drift mobility is determined. It is shown that the influenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a15daf8b04be8c90c6055e7681259cc3
https://doi.org/10.1007/bf01542873
https://doi.org/10.1007/bf01542873
Publikováno v:
Journal of Applied Physics. 78:1763-1775
Theory and measurements of the conductivity and the (transient) photoconductivity in the microwave frequency range are presented. The theory is tested on noninvasive measurements of semiconductors with known properties, i.e., Si wafers, in a simple a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2e65fbf7b86f11cab46a0f8790e0de8
https://doi.org/10.1063/1.360206
https://doi.org/10.1063/1.360206
Autor:
M. Kunst, C. Swiatkowski
Publikováno v:
Journal of Non-Crystalline Solids. :243-246
During the deposition of a-Si:H films at different temperatures on c-Si substrates the transient photoconductivity was monitored in order to obtain information on the electronic properties of the a-Si:H/c-Si interface. The interface was characterized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::426663881013b8ee920beee7763d941f
https://doi.org/10.1016/0022-3093(93)90536-7
https://doi.org/10.1016/0022-3093(93)90536-7
Publikováno v:
Journal of Non-Crystalline Solids. :717-720
Solar Cells consisting of an amorphous silicon emitter on a crystalline silicon base were prepared by PECVD. Measured generator and bias-dependent spectral response characteristics of these devices were interpreted by aid of numerical simulations. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25863d8a90f00cb878ac2053aeffe32e
https://doi.org/10.1016/0022-3093(93)91098-n
https://doi.org/10.1016/0022-3093(93)91098-n
Autor:
Heinrich Christoph Neitzert, J.B. Chevrier, Regis Vanderhaghen, Marinus Kunst, C. Swiatkowski
Publikováno v:
Journal of Non-Crystalline Solids. :837-840
Multilayers of a-Si:N/a-SiN:H and a-Si:H/a-SiC:H were investigated by contactless transient photoconductivity measurements. A faster decay of the photoconductivity was observed in the a-Si:H/a-SiC:H multilayer whereas the a-Si:H/a-SiN:H multilayer wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28ecbeb5fe3cfaf8fddd7cabc4340d6e
https://doi.org/10.1016/0022-3093(93)91127-o
https://doi.org/10.1016/0022-3093(93)91127-o
Publikováno v:
Journal of Non-Crystalline Solids. :487-490
The optoelectronic properties of a-Si:H films grown at different substrate temperatures between 30°C and 250°C were evaluated in-situ by contactless Time Resolved Microwave Conductivity (TRMC) measurements. The transient photoconductivity induced b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c06caa916c769ae2f2c4b96e41ba1a6d
https://doi.org/10.1016/s0022-3093(05)80161-9
https://doi.org/10.1016/s0022-3093(05)80161-9
Publikováno v:
MRS Proceedings. 467
By comparison of transient photoconductivity (TPC) and transient photoinduced absorption (PA) the influence of the density of states in the bandgap on excess charge carrier kinetics is studied for a-Si:H films deposited at different temperatures and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::864385a0a80dbbd1703b66c9100d1ed7
https://doi.org/10.1557/proc-467-203
https://doi.org/10.1557/proc-467-203
Autor:
D. McClymont, C. Dietrich, H. Bergner, C. Swiatkowski, K-O. Hofacker, K. Hempel, M. Pohland, D. Runge, J. Sturm, G. Sargsjan, F. Esfahani, A. Benedix, H.H. Berger, D. Bartelt, J. Degenhardt
Publikováno v:
International Symposium for Testing and Failure Analysis.
Conventional needle probecard techniques suffer from several problems: needles scratch the pads causing bonding problems, the maximum test speed is limited by the poor high frequency performance of the needle contacts. This contribution presents a ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a670663c8accfac1e06e959d3a65acd8
https://doi.org/10.31399/asm.cp.istfa1996p0263
https://doi.org/10.31399/asm.cp.istfa1996p0263