Zobrazeno 1 - 10
of 42
pro vyhledávání: '"C. Sudhama"'
Publikováno v:
Integrated Ferroelectrics. 7:319-328
The effects of the nonlinearity and polarization relaxation of storage capacitor on DRAM R/W operations are explained using a simple model and PSPICE simulation. For a given line-voltage design and pass device, the voltage signal and the READ/WRITE t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e23780b4236fa7db3cd24914e2818829
https://doi.org/10.1080/10584589508220242
https://doi.org/10.1080/10584589508220242
Publikováno v:
Journal of Electronic Materials. 23:1261-1268
In this paper, we present electrical and material properties of thin films (100 to 400 nm) of magnetron-sputtered ferroelectric PZT for memory applications. The optimal lead-compensation power (and the resulting film composition) is independent of fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04e0e7b14e315a994b0b3120f6878a7d
https://doi.org/10.1007/bf02649888
https://doi.org/10.1007/bf02649888
Publikováno v:
Integrated Ferroelectrics. 5:169-176
The effects of deposition temperature on the properties of thin films of sputtered lead-zirconate-titanate (PZT) have been studied for ULSI DRAM storage capacitor dielectric applications. The films were deposited by reactive dc magnetron sputtering f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6e0c500593f7d601ce40a1d00bf1a5f
https://doi.org/10.1080/10584589408017009
https://doi.org/10.1080/10584589408017009
Autor:
A. C. Campbell, Papu D. Maniar, C. J. Mogab, R. Moazzami, Jack C. Lee, Robert E. Jones, C. Sudhama
Publikováno v:
Journal of Applied Physics. 75:1014-1022
Time‐zero current‐voltage characteristics and time‐dependent current behavior of metal‐ferroelectric‐metal (Pt‐PZT‐Pt) capacitor structures have been studied. Under constant‐voltage stressing, the current density through the 1500‐A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b8c0b1e56648c6688d3c8b277052aac
https://doi.org/10.1063/1.356508
https://doi.org/10.1063/1.356508
Publikováno v:
Integrated Ferroelectrics. 3:113-120
A low thermal budget (with 550°C annealing) process with Ti-compensation for sputtered ferroelectric PZT thin films has been developed. PZT films with a composition near the morphotrophic phase boundary (Zr/Ti = 53/47) annealed at 550°C for 1 hr in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72d36cc220fd2a23bb7aa108c60422cd
https://doi.org/10.1080/10584589308216705
https://doi.org/10.1080/10584589308216705
Publikováno v:
MRS Online Proceedings Library. 265:313-318
The origin and the effects of asymmetrical electrical behavior in sputtered PZT (Zr/Ti=65/35) thin film capacitors with Pt electrodes have been studied. The asymmetry and constriction in the P-E hysteresis loops are understood to result from differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f416b15973e71e0ac96e41e2c47379ef
https://doi.org/10.1557/proc-265-313
https://doi.org/10.1557/proc-265-313
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1562-1568
The fabrication of high dielectric constant lead zirconate titanate thin films for dynamic random access memory application involves post‐deposition annealing to convert the low dielectric constant pyrochlore phase to the desired high dielectric co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a04be241f75cfcf6783154e2aea0c7
https://doi.org/10.1116/1.578045
https://doi.org/10.1116/1.578045
Publikováno v:
IEEE Electron Device Letters. 16:130-132
The effects of stress parameters (e,g,, stress magnitude, frequency, and pulse shape) on the loss of DRAM polarization during unipolar pulse stressing in sol-gel P(L)ZT thin film capacitors have been studied. The results indicate that there is a stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0821a6ce81692e6388862f131027a182
https://doi.org/10.1109/55.372491
https://doi.org/10.1109/55.372491
Publikováno v:
IEEE Electron Device Letters. 15:126-128
Important aspects of nonlinear storage capacitor switching and their impact on DRAM READ/WRITE operations are explained using a simple model and PSpice simulation. The voltage signal and charge-transfer rate are found to be dependent not only on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d1eccab3a79abeb5da16d5f94d2d950
https://doi.org/10.1109/55.285408
https://doi.org/10.1109/55.285408
Autor:
R. Moazzami, P. Maniar, Rajesh Khamankar, Robert E. Jones, Junsung Lee, C.J. Mogab, C. Sudhama, Bo Jiang, Jiyoung Kim
Publikováno v:
Proceedings of 1994 VLSI Technology Symposium.
Very low leakage current density (5/spl times/10/sup -7/ A/cm/sup 2/ even at 125/spl deg/C) and high charge storage density (100 fCspl mu/m/sup 2/) under V/sub DD2=1 V conditions have been achieved using 5% La doped PZT films for gigabit DRAM capacit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be964f5c1d5807744c6bbbbb191dd6d
https://doi.org/10.1109/vlsit.1994.324412
https://doi.org/10.1109/vlsit.1994.324412