Výsledky vyhledávání - "C. Steven Lai"

Investigation of thin oxide layer removal from Si substrates using an SiO2atomic layer etching approach: the importance of the reactivity of the substrate

Autor: Dominik Metzler, Chen Li, C Steven Lai, Gottlieb S. Oehrlein, Eric Hudson

Publikováno v: Journal of Physics D: Applied Physics. 50:254006

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e0d88148f624595c548b3312fb5d36c5
https://doi.org/10.1088/1361-6463/aa71f1

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Selective Removal of Native SiO2 Using XeF2

Autor: Pablo Mancheno-Posso, Anthony J. Muscat, C. Steven Lai, Adam P. Hinckley

Publikováno v: ECS Meeting Abstracts. :1006-1006

Selective removal of native silicon dioxide (NOx) relative to the underlying Si substrate and to other films present in a device structure is important in forming low resistance electrical contacts. Xenon difluoride (XeF2) was chosen as the F-source

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f556e2682d611c349412ed9552f5c53a
https://doi.org/10.1149/ma2015-02/26/1006

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Akademický článek

Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate.

Autor: Dominik Metzler, Chen Li, C Steven Lai, Eric A Hudson, Gottlieb S Oehrlein

Publikováno v: Journal of Physics D: Applied Physics; 6/28/2017, Vol. 50 Issue 25, p1-1, 1p

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