Zobrazeno 1 - 5
of 5
pro vyhledávání: '"C. Steven Lai"'
Publikováno v:
Journal of Physics D: Applied Physics. 50:254006
Publikováno v:
ECS Meeting Abstracts. :1006-1006
Selective removal of native silicon dioxide (NOx) relative to the underlying Si substrate and to other films present in a device structure is important in forming low resistance electrical contacts. Xenon difluoride (XeF2) was chosen as the F-source
Publikováno v:
Journal of Physics D: Applied Physics; 6/28/2017, Vol. 50 Issue 25, p1-1, 1p
Autor:
Boris, David R., Walton, Scott G.
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Nov2018, Vol. 36 Issue 6, pN.PAG-N.PAG, 8p
Publikováno v:
Journal of Physics D: Applied Physics; 12/13/2017, Vol. 50 Issue 49, p1-1, 1p