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Localized charge trapping memory cells in a 63 nm generation with nanoscale epitaxial cobalt salicide buried bitlines

Autor: Matthias Markert, B. Tippelt, David Pritchard, Martin Verhoeven, Torsten Mueller, Ludovic Lattard, Mark Isler, C. Schupke, E.G. Stein v. Kamienski, R. Reisdorf, Christoph Kleint, Veronika Polei, F. Heinrichsdorf, J.-U. Sachse, Hocine Boubekeur, Dominik Olligs, Nicolas Nagel, S. Teichert, Clemens Fitz, Thomas Mikolajick, S. Riedel, Christoph Ludwig

Publikováno v: Scopus-Elsevier

A 63nm Twin Flash memory cell with a size of 0.0225μm2 per 2 (or 4) bits is presented. To achieve small cell areas, a buried bit line and an aggressive gate length of 100 nm are the key features of this cell together with a minimum thermal budget pr

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