Zobrazeno 1 - 10
of 504
pro vyhledávání: '"C. Schlockermann"'
Autor:
Chao Chen, Hanno Volker, Matti R. Wirtssohn, Marvin Kaminski, Ulrich M. Engelmann, F. Schlich, Ricardo P. S. M. Lobo, K. Krüger, C. Schlockermann, Peter Jost, Matthias Wuttig
Publikováno v:
Physical review / B 95(9), 094111 (2017). doi:10.1103/PhysRevB.95.094111
Physical review / B 95(9), 094111 (2017). doi:10.1103/PhysRevB.95.094111
Published by The American Physical Society, Woodbury, NY
Published by The American Physical Society, Woodbury, NY
Autor:
C. Schlockermann, Peter Jost, Ernst-Roland Sittner, Felix R. L. Lange, Karl Simon Siegert, Matthias Wuttig
Publikováno v:
physica status solidi (a). 210:147-152
Phase-change materials form a unique material class, characterized by a rather unusual combination of physical properties. Exhibiting fast crystallization and a large contrast in optical reflectivity and electrical conductivity between the amorphous
Autor:
Rüdiger Schmidt, Daniel Krebs, Gunnar Bruns, Reinhard Carius, C. Schlockermann, Josef Klomfaβ, Jennifer Luckas, Martin Salinga, Matthias Wuttig
Publikováno v:
Journal of Non-Crystalline Solids. 358:2412-2415
Phase change materials are probably the most promising candidates to be used in the upcoming generation of memory technologies. One of the main challenges for applications is the resistance increase over time occurring in the amorphous state called r
Autor:
Hanno Volker, Peter Jost, Matthias Wuttig, C. Schlockermann, Michael Woda, P. Merkelbach, Theo Siegrist
Publikováno v:
Nature materials. 10(3)
Localization of charge carriers in crystalline solids has been the subject of numerous investigations over more than half a century. Materials that show a metal-insulator transition without a structural change are therefore of interest. Mechanisms le
Autor:
C. Schlockermann, Ernst-Roland Sittner, Theo Siegrist, Karl Simon Siegert, Felix R. L. Lange, Matthias Wuttig, Hanno Volker
Publikováno v:
Reports on Progress in Physics. 78:013001
Controlling thermal transport in solids is of paramount importance for many applications. Often thermal management is crucial for a device's performance, as it affects both reliability and power consumption. A number of intricate concepts have been d
Autor:
Michael Kund, Matthias Wuttig, P. Merkelbach, Gunnar Bruns, Martin Salinga, Jan Boris Philipp, Thomas Happ, C. Schlockermann
Publikováno v:
Applied Physics Letters. 95:043108
The electrical switching behavior of GeTe-based phase change memory devices is characterized by time resolved experiments. SET pulses with a duration of less than 16 ns are shown to crystallize the material. Depending on the resistance of the RESET s
Autor:
Wuttig, Matthias1,2,3 (AUTHOR) wuttig@physik.rwth-aachen.de, Schön, Carl‐Friedrich1 (AUTHOR), Kim, Dasol1 (AUTHOR), Golub, Pavlo4 (AUTHOR), Gatti, Carlo5 (AUTHOR), Raty, Jean‐Yves6 (AUTHOR), Kooi, Bart J.7 (AUTHOR), Pendás, Ángel Martín8 (AUTHOR), Arora, Raagya9 (AUTHOR), Waghmare, Umesh9 (AUTHOR)
Publikováno v:
Advanced Science. 2/9/2024, Vol. 11 Issue 6, p1-8. 8p.
Autor:
Stenz, Christian1 (AUTHOR) stenz@physik.rwth-aachen.de, Pries, Julian1 (AUTHOR), Surta, T. Wesley2 (AUTHOR), Gaultois, Michael W.3 (AUTHOR), Wuttig, Matthias1,4 (AUTHOR) wuttig@physik.rwth-aachen.de
Publikováno v:
Advanced Science. 12/27/2023, Vol. 10 Issue 36, p1-14. 14p.
Publikováno v:
Journal of Applied Physics; 4/7/2023, Vol. 133 Issue 13, p1-7, 7p
Publikováno v:
Nanoscale Horizons; Sep2024, Vol. 9 Issue 9, p1574-1581, 8p