Zobrazeno 1 - 10
of 85
pro vyhledávání: '"C. Sandow"'
Autor:
E. Chuvieco, C. Sandow, K. P. Guenther, F. González-Alonso, J. M. Pereira, O. Pérez, A. V. Bradley, M. Schultz, F. Mouillot, P. Ciais
Publikováno v:
The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, Vol XXXIX-B8, Pp 13-16 (2012)
The European Space Agency (ESA) Climate Change Initiative (CCI) is part of the European contribution to the Global Climate Observing System (GCOS) program. Fire disturbance is one of the Essential Climate Variables (ECV) included in the ESA CCI progr
Externí odkaz:
https://doaj.org/article/8f96eb40ef13487da21bad0c25f5c356
Akademický článek
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Autor:
C. Sandow, Jean-Pierre Raskin, Qing-Tai Zhao, C. Urban, A. Fox, Mostafa Emam, Siegfried Prof. Dr. Mantl
Publikováno v:
Solid-State Electronics. 54:877-882
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 μA/μm for n-type devices with As segregat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c36dc20a95de30f9d4f9cc54addf5098
https://doi.org/10.1016/j.sse.2010.04.013
https://doi.org/10.1016/j.sse.2010.04.013
Publikováno v:
Solid-State Electronics
In this paper, we present a detailed study of nickel-silicide source and drain Schottky barrier MOSFETs on thin-body silicon-on-insulator. We use silicidation induced dopant segregation to lower the effective Schottky barrier height of NiSi source/dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d52d96ad2b8dce7323b1fc09be8efe8
https://doi.org/10.1016/j.sse.2009.12.017
https://doi.org/10.1016/j.sse.2009.12.017
Publikováno v:
Journal of Materials Research. 24:135-139
Epitaxial growth of a NiSi2 layer was observed on S+ ion-implanted Si(100) at a low temperature of 550 °C. Depending on the S+ dose and the Ni thickness, we identified different nickel silicide phases. High quality and uniform epitaxial NiSi2 layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808b0bfa3217b7c00f3d7624084be325
https://doi.org/10.1557/jmr.2009.0006
https://doi.org/10.1557/jmr.2009.0006
Autor:
M. Mueller, Siegfried Prof. Dr. Mantl, C. Sandow, Dan Buca, C. Urban, S. Estévez, Qing-Tai Zhao, St. Lenk
Publikováno v:
Materials Science and Engineering: B. :168-171
We present a systematic study of the Schottky barrier lowering induced by dopant segregation during nickel germanidation at NiGe/n-Ge(1 0 0) contacts. We used two different doping ions (As/P) and prepared two different NiGe layer thicknesses (30 nm/6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00ab89f6ad7922044c88c87ccc0cc9a8
https://doi.org/10.1016/j.mseb.2008.09.037
https://doi.org/10.1016/j.mseb.2008.09.037
Autor:
Tassilo Heeg, Joao Marcelo J. Lopes, E. Durğun Özben, S. Mantl, M. Roeckerath, C. Sandow, S. Lenk, Jürgen Schubert
Publikováno v:
Applied Physics A. 94:521-524
Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-κ gate dielectric in a gate last process. The GdSc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a01f2b3ccee24a54f8041538f0e79655
https://doi.org/10.1007/s00339-008-4962-8
https://doi.org/10.1007/s00339-008-4962-8
Autor:
Ladislav Andricek, C. Sandow, R.H. Richter, A. Frey, N. Wermes, Jaap Velthuis, C. Kreidl, L. Reuen, Gerhard Lutz, H. G. Moser, R. Kohrs, A. Raspereza, Hans Krüger, M. Trimpl, Peter Fischer, Daniel Scheirich, F. Giesen, M. Mathes, P. Lodomez, Peter Kodys, Zdenek Dolezal, Q. Wei, E. von Törne, M. Koch
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 579:685-689
In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, thereby combining the advantages of a fully depleted silicon sensor with in-pixel amplification. A 450 μm thick DEPFET was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f577ef1cbbc317673462001a749bc31
https://doi.org/10.1016/j.nima.2007.05.278
https://doi.org/10.1016/j.nima.2007.05.278
Autor:
E. von Törne, M. Mathes, C. Sandow, Jaap Velthuis, Lothar Strüder, N. Wermes, Gerhard Lutz, L. Reuen, Ladislav Andricek, H. G. Moser, Chen Zhang, Johannes Treis, Robert Richter, R. Kohrs, M. Trimpl, Peter Fischer, Ivan Peric, Hans Krüger, F. Giesen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 569:57-60
In a DEPFET sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, therefore combining the advantages of a fully depleted silicon sensor with in-pixel amplification. Presently, the DEPFET is mainly developed for two different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6b59f629a71ae307a5422ee9b55cf24
https://doi.org/10.1016/j.nima.2006.09.012
https://doi.org/10.1016/j.nima.2006.09.012
Autor:
L. Reuen, C. Sandow, H. G. Moser, R. Kohrs, M. Trimpl, Lothar Strüder, Rainer Richter, Ladislav Andricek, Peter Fischer, Johannes Treis, Hans Krüger, G. Lutz, Norbert Wermes
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 568:176-180
The proposal of a vertex detector for the International Linear Collider (ILC) using DEPleted Field Effect Transistor (DEPFET) detectors [A DEPFET based vertex detector for the detector at TESLA LC-Note, LC-DET-2002-004, DESY, April 2002] states chall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd3727fc1fdca2b7b8637a5da4520271
https://doi.org/10.1016/j.nima.2006.05.267
https://doi.org/10.1016/j.nima.2006.05.267