Zobrazeno 1 - 10
of 109
pro vyhledávání: '"C. Sabbione"'
Autor:
B. Ben Yahia, M.S. Amara, M. Gallard, N. Burle, S. Escoubas, C. Guichet, M. Putero, C. Mocuta, M.-I. Richard, R. Chahine, C. Sabbione, M. Bernard, L. Fellouh, P. Noé, O. Thomas
Publikováno v:
Micro and Nano Engineering, Vol 1, Iss , Pp 63-67 (2018)
Stress changes in GeTe thin films on silicon have been studied in situ as a function of temperature by optical curvature measurements. Crystallization of the initially amorphous layers is evidenced by a steep tensile stress buildup. The crystallizati
Externí odkaz:
https://doaj.org/article/efe0ec581a7e4923851363076d921cfa
Autor:
V. Meli, G. Navarro, J. Rottner, N. Castellani, S. Martin, N. P. Tran, G. Bourgeois, C. Sabbione, M. C. Cyrille
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36807d2403994f576673105cfe58ddd2
https://doi.org/10.1109/irps48203.2023.10118339
https://doi.org/10.1109/irps48203.2023.10118339
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
G. Navarro, C. Sabbione, V. Meli, L. E. Nistor, M. Frei, J. Garrione, M. Tessaire, F. Fillot, N. Bernier, E. Nolot, B. Sklenard, J. Li, S. Martin, N. Castellani, G. Bourgeois, M. C. Cyrille, F. Andrieu
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f210bc05591e75b7ee6cd0bc1c042e
https://doi.org/10.1109/imw52921.2022.9779285
https://doi.org/10.1109/imw52921.2022.9779285
Autor:
C. Sabbione, Jean-Paul Barnes, Emmanuel Nolot, Gabriele Navarro, Agnès Tempez, Sebastien Legendre, Yann Mazel
Publikováno v:
Surface and Interface Analysis. 52:895-899
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3779d3953d05f81a29f15ab96d3725e
https://doi.org/10.1002/sia.6823
https://doi.org/10.1002/sia.6823
Autor:
A. Roule, W. Pessoa, C. Sabbione, Catia Costa, Chris Jeynes, Emmanuel Nolot, Gabriele Navarro, M. Mantler, F. Pierre
Publikováno v:
Journal of Analytical Atomic Spectrometry. 35:701-712
We have calibrated on-site WD-XRF (wavelength-dispersive X-ray fluorescence) measurements of GeSbTe:N (GST:N) stoichiometry with off-site accurate ion beam analysis (IBA). N is determined by elastic backscattering spectrometry (EBS) using the resonan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8906f09c42d512d55fd5eec1d87125ba
https://doi.org/10.1039/c9ja00382g
https://doi.org/10.1039/c9ja00382g
Publikováno v:
Native Crops in Latin America ISBN: 9781003087618
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::099861a19158fa990b1430c0cc4f592a
https://doi.org/10.1201/9781003087618-9
https://doi.org/10.1201/9781003087618-9
Autor:
María C. Añón, Alejandra V. Quiroga, Adriana A. Scilingo, Valeria A. Tironi, Ana C. Sabbione, Agustina E. Nardo, Santiago E. Suárez, Susan F. García Fillería
Publikováno v:
Native Crops in Latin America ISBN: 9781003087618
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c341e7c2e8188c3b11bc5cc099caf6dd
https://doi.org/10.1201/9781003087618-8
https://doi.org/10.1201/9781003087618-8
Autor:
A. Jannaud, Marianne Coig, J. Garrione, Mathieu Bernard, Marie-Claire Cyrille, F. Al Mamun, F. Mazen, B. Hemard, T. Magis, C. Socquet-Clerc, Gabriele Navarro, V. Meli, Guillaume Bourgeois, Emmanuel Nolot, Francois Andrieu, N. Bernier, J. P. Barnes, Eugénie Martinez, N. Castellani, C. Charpin, F. Milesi, C. Sabbione, F. Laulagnet
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
International audience; In this paper we investigate the effect of Carbon ion implantation in Ge$_2$ Sb$_2$ Te$_5$ based Phase-Change Memory (PCM) targeting reliability improvement in 4kb memory arrays. We show how ion implantation by beam line allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70e57736ecd498b80119d3cb144b5aed
https://hal-cea.archives-ouvertes.fr/cea-03373794
https://hal-cea.archives-ouvertes.fr/cea-03373794