Zobrazeno 1 - 7
of 7
pro vyhledávání: '"C. S. Korman"'
Autor:
K. Shenai, P.A. Piacente, Bantval Jayant Baliga, R. Saia, William Andrew Hennessy, C. S. Korman
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A novel high-frequency power FET technology is reported that is based on the application of blanket-deposited LPCVD (low-pressure chemical vapor deposition) WSi/sub 2/ to reduce the gate sheet resistance and selectively deposited LPCVD W to improve t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a14991e4e37ce5a3b56f3f90dac90da
https://doi.org/10.1109/iedm.1988.32933
https://doi.org/10.1109/iedm.1988.32933
Autor:
William Andrew Hennessy, M. Ghezzo, Michael S. Adler, C. S. Korman, H.-R. Chang, K. Shenai, V. Temple
Publikováno v:
International Technical Digest on Electron Devices.
Optimum low-voltage silicon power MOSFET technologies with forward conductivities approaching the silicon limit are presented. Vertical scaled trench power MOSFETs with measured performances of V/sub DB/=55 V (R/sub sp/=0.2 m Omega -cm/sup 2/, k/sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c36c0b47d5fabd3967ebdb791d3bd7
https://doi.org/10.1109/iedm.1990.237042
https://doi.org/10.1109/iedm.1990.237042
Publikováno v:
Physical Review B. 19:994-1014
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61841bc1ffe1f1f7dcb4aa057d6d19e8
https://doi.org/10.1103/physrevb.19.994
https://doi.org/10.1103/physrevb.19.994
Autor:
C. S. Korman
Publikováno v:
Journal of Vacuum Science and Technology. 20:476-479
The etch selectivity in a CCl4–O2 discharge of undoped polysilicon over SiO2 is found to increase as a function of oxygen concentration in the CCl4–O2 gas feed. Selectivities of 4:1, 15:1, and 24:1 are found at O2 concentrations of 0, 25, and 50%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::178e6b11ba331c65ad03b7d2848c318b
https://doi.org/10.1116/1.571339
https://doi.org/10.1116/1.571339
Autor:
C. S. Korman, R. V. Coleman
Publikováno v:
Physical Review B. 15:1877-1893
Studies of inelastic tunneling spectra of nitro-substituted single aromatic ring compounds have shown a correlation between tunneling mode intensity and orientation of the ring relative to the tunnel junction interface. Details of the adsorption of s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ac0b2ad7257cf1407f185c8ae6d66e6
https://doi.org/10.1103/physrevb.15.1877
https://doi.org/10.1103/physrevb.15.1877
Publikováno v:
Springer Series in Solid-State Sciences ISBN: 9783642812309
Applications of inelastic electron tunneling spectroscopy to the study of biological molecules will be reviewed. Experiments include work on amino acids, purine and pyridine bases, nucleosides, nucleotides, DNA, RNA, proteins and other selected compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c86ffba51a5721394ce89662d3610732
https://doi.org/10.1007/978-3-642-81228-6_4
https://doi.org/10.1007/978-3-642-81228-6_4
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:1740
A new power field effect transistor (FET) structure with selectively silicided gate and source regions is described. This structure simultaneously lowers the gate sheet resistance and source contact resistance. Vertical power double‐diffused metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed942a5732e10bdb57dd3ae00d34341
https://doi.org/10.1116/1.584170
https://doi.org/10.1116/1.584170