Zobrazeno 1 - 10
of 24
pro vyhledávání: '"C. Rheinfelder"'
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
Surface Acoustic Wave (SAW) filters with high sidelobe suppression, steep passband skirts and small chip sizes are key components for channel selection in modern mobile communication systems. These filters are fabricated on highly stable quartz subst
Autor:
W. Heinrich, C. Rheinfelder
Publikováno v:
1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271).
Using a high-resistivity substrate SiGe HBT process by Daimler-Benz, MMIC oscillators with 3 dBm output power at 38 GHz as well as a 26 GHz amplifier and a 77 GHz diode mixer were fabricated. This demonstrates the potential of silicon-based ICs even
Publikováno v:
1997 IEEE MTT-S International Microwave Symposium Digest.
A new large-signal model for SiGe HBTs is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from measurements using a special procedure. The model yields excellent accuracy for DC and S
Publikováno v:
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).
A 38 GHz coplanar 8th harmonic mixer operating as a down converter on high resistivity FZ (float zone) silicon is realized. Two aluminum metal layers are used. Instead of air bridges, MIM (metal insulator metal) connections between the ground planes
Autor:
W. Heinrich, T. Langer, Matthias Gross, C. Rheinfelder, D. Kalinowski, R. Heinzelmann, Andreas Stoehr, M. Schmidt, T. Alder, Dieter Jaeger
Publikováno v:
SPIE Proceedings.
In this paper, the concept of a hybrid integrated optical sensor system for frequency selective electric field measurement will be presented. The sensor system will be applicable to E-field measurement problems up to frequencies in the microwave regi
Publikováno v:
26th European Microwave Conference, 1996.
We report on design, technology, and experimental results of microstrip and coplanar Si-SiGe HBT Ks-band oscillators integrated monolithically on high resistivity silicon. The tuning range of the microstrip VCO was 100 MHz around 22.8 GHz and the out
Publikováno v:
26th European Microwave Conference, 1996.
Efficient models for coplanar waveguide (CPW) discontinuities and junctions on Si substrate have been developed, which are suitable for W-band MMIC design. The models consist of line sections and lumped-element equivalent circuits and were derived by
Publikováno v:
1996 26th European Microwave Conference.
A monolithic integrated coplanar millimetre wave mixer is realized in SIMMWIC(silicon millimetre wave integrated circuit) technology. Barrier height reduced p-type Schottky diodes are used as mixing elements. The mixer is realized as a single balance
Autor:
F.J. Schmuckle, J. Gerdes, J.-F. Luy, Wolfgang Heinrich, Friedrich Schäffler, Helmut Jorke, Karl Strohm, C. Rheinfelder, Ralf Doerner, H. Kibbel
Publikováno v:
Electronics Letters. 31:1353-1354
Design, technology and first results of a coplanar SiGe HBT amplifier monolithically integrated on high resistivity silicon are reported. The circuit provides a gain of 4 dB at 26 GHz.
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