Výsledky vyhledávání - "C. R. Wronski"

An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements

Autor: C. R. Wronski, R. W. Collins, N. Hata, Lihong Jiao, Ing-Shin Chen

Publikováno v: Applied Physics Letters. 72:1057-1059

The uncertainties inherent in the normalization of subgap photoconductivity spectra to the optical absorption spectra α(hv) in a-Si:H based films have been addressed. An analysis is presented which is based on optical transitions of constant dipole

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eae4442a9de11ddad9bd8e8a98ce3244
https://doi.org/10.1063/1.120963

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Real Time Optics of the Growth of Textured Silicon Films in Photovoltaics: Final Technical Report, 1 August 1999--12 August 2002

Autor: C. R. Wronski, R. W. Collins

Novel optical instruments, including single and dual rotating-compensator multichannel ellipsometers, have been designed and developed to probe the evolution of the microstructure, spectroscopic optical properties, and other materials characteristics

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9286e402f85eb9e24fc9d0c83f190258
https://doi.org/10.2172/15004830

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Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

Autor: Gautam Ganguly, Z. Lu, C. R. Wronski, Quan Yuan, Eric A. Schiff, Steluta A Dinca, V. Vlahos

Publikováno v: MRS Proceedings. 762

We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f2284c167216f54b57d01e2fcc0bc44
https://doi.org/10.1557/proc-762-a7.1

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Evolution of Crystallinity in Mixed-Phase (a+μc)-Si:H as Determined by Real Time Spectroscopic Ellipsometry

Autor: A. S. Ferlauto, G. M. Ferreira, C. R. Wronski, K. M. Jones, M. M. Al-Jassim, J. M. Pearce, R. W. Collins, R. J. Koval

Publikováno v: Scopus-Elsevier
Electrical and Computer Engineering Publications

The ability to characterize the phase of the intrinsic (i) layers incorporated into amorphous silicon [a-Si:H] and microcrystalline silicon [μc-Si:H] thin film solar cells is critically important for cell optimization. In our research, a new method

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::404c3cb1fc55a36e63c9099196464a12
https://doi.org/10.1557/proc-762-a5.10

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Stable a-Si:H-Based Multijunction Solar Cells with Guidance from Real-Time Optics: Final Report, 17 July 1998--16 November 2001

Autor: R. W. Collins, R. J. Koval, C. R. Wronski, J. M. Pearce, Chi Chen, A. S. Ferlauto, G. M. Ferreira

This report describes the new insights obtained into the growth of hydrogenated silicon (Si:H) films via real-time spectroscopic ellipsometry (RTSE) measurements. Evolutionary phase diagrams were expanded to include the effects of different depositio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2ff14a4aff4bfde05af05e9a65cd65d
https://doi.org/10.2172/15000849

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Wide-band-gap solar cells with high stabilized performance. Annual subcontract report, July 15, 1994--July 14, 1995

Autor: R. W. Collins, C. R. Wronski, S. J. Fonash

This report describes work performed by Pennsylvania State University in collaboration with the NREL Wide-Band-Gap Team. The goal of this team is to develop a single-junction, wide-gap solar cell with good stabilized parameters. The objectives of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a6be06c192bb4713cade942a39622f06
https://doi.org/10.2172/132675

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Hydrogen effects on the TCO/a-Si,C:H interface: Progress by the NREL wide bandgap team

Autor: John R. Abelson, Y. Yang, C. R. Wronski, I. An, R. W. Collins, S.‐Y. Yang, Yiwei Lu

Publikováno v: AIP Conference Proceedings.

The NREL wide bandgap team has investigated the deposition and properties of the ‘‘top contact’’ structure for multijunction solar cells using spectroscopic ellipsometry and other techniques. We report the effects of hydrogen dilution during

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::954a7ad3bd6d3df9878645b6d8cb0479
https://doi.org/10.1063/1.45713

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In-Situ Characterization of Growth and Interfaces in a-Si:H Devices, Annual Subcontract Report, 1 May 1991 - 30 April 1992

Autor: R. W. Collins, I. An, C. R. Wronski, Youming Li

This report describes the in-situ characterization of growth and interfaces in amorphous silicon (a-Si:H) devices. The growth of a-Si:H by plasma-enhanced chemical vapor deposition (PECVD) is complex and involves many gas-phase and solid-surface chem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::747a41f5829762248866d73632f35293
https://doi.org/10.2172/6901540

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An experiment to distinguish between bimolecular and single-carrier driven models of metastable defect generation

Autor: S. J. Fonash, J. K. Arch, C. R. Wronski, S. S. Nag, J.L. Nicque

Publikováno v: AIP Conference Proceedings.

The computer program AMPS has been used to explore experimental situations for testing the validity of bimolecular and single‐carrier driven models of metastable defect generation in a‐Si:H. In this study, AMPS was used to evaluate the effect of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::15157f94abce8e0b2236103196290e8c
https://doi.org/10.1063/1.41043

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