Zobrazeno 1 - 10
of 36
pro vyhledávání: '"C. R. Viswanathan"'
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C6), pp.C6-43-C6-48. ⟨10.1051/jp4:1994607⟩
Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C6), pp.C6-43-C6-48. ⟨10.1051/jp4:1994607⟩
The reliability of oxide and reoxidized-nitrided oxide (RNO) gate dielectrics was examined by comparing the low frequency noise characteristics at low temperature of p-channel devices before and after positive F-N stress. The RNO devices were found t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d0a37c618d5e6cfcc852ad5702a2ff3
https://doi.org/10.1051/jp4:1994607
https://doi.org/10.1051/jp4:1994607
Publikováno v:
IEEE Transactions on Electron Devices. 41:1965-1971
Flicker noise is the dominant noise source in silicon MOSFET's. Even though considerable amount of work has been done in investigating the noise mechanism, controversy still exists as to the noise origin. In this paper, a systematic study of flicker
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f21e072d8e061d5121ac7d658ab669f5
https://doi.org/10.1109/16.333812
https://doi.org/10.1109/16.333812
Publikováno v:
International Journal of Electronics. 69:621-629
The I-V and low frequency noise characteristics of MBE grown GaAs/InGaAs high electron mobility transistors are studied at room temperature and temperatures down to 6K. A threshold voltage shift is observed at low temperatures resulting in conductanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a10152dd222d57ccd0b7c5cef0401db4
https://doi.org/10.1080/00207219008920347
https://doi.org/10.1080/00207219008920347
Autor:
C. R. Viswanathan, L. O. Bubulac
Publikováno v:
Applied Physics Letters. 60:222-224
This letter reports a novel analytical method using negative secondary ion mass spectrometry (SIMS) of the Te matrix element with a Cs primary ion beam to analyze and determine the composition in HgCdTe epilayers with a high sensitivity (better than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ab78d2dc9ce2c2ffc60180c5dd169a
https://doi.org/10.1063/1.106970
https://doi.org/10.1063/1.106970
Autor:
C. R. Viswanathan
Publikováno v:
The Kluwer International Series in Engineering and Computer Science ISBN: 9781461285847
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00a196282a781c6cd1a8f69ff617b529
https://doi.org/10.1007/978-1-4613-1355-7_3
https://doi.org/10.1007/978-1-4613-1355-7_3
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C6), pp.C6-37-C6-41. ⟨10.1051/jp4:1994606⟩
Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C6), pp.C6-37-C6-41. ⟨10.1051/jp4:1994606⟩
The impact of hot-carrier (HC) stress on CMOS inverters at 77K was examined as a function of temperature. It was found that the degradation in inverter propagation delay was about one order less than that of the device transconductance degradation. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d6e79504331bf06ecccf3a43ae3d7f2
https://hal.archives-ouvertes.fr/jpa-00253100
https://hal.archives-ouvertes.fr/jpa-00253100
Autor:
Jimmin Chang, C. R. Viswanathan
Publikováno v:
AIP Conference Proceedings.
Flicker noise behavior of n‐ and p‐channel silicon MOSFET’s operating from subthreshold to strong inversion at room to low temperatures will be described. It is found that, for various bias and temperature conditions, input referred noise in n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::393016849b0fb51628f6243deb8ea43e
https://doi.org/10.1063/1.44665
https://doi.org/10.1063/1.44665
Autor:
C. R. Viswanathan, Jen-Tai Hsu
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c1f3738005a52fc4d5244a5846e96f
https://doi.org/10.7567/ssdm.1993.a-4-4
https://doi.org/10.7567/ssdm.1993.a-4-4
Publikováno v:
AIP Conference Proceedings.
This paper describes the behavior of arsenic when diffused from an ion implanted source in Hg1−xCdxTe (x≂0.19–0.23) grown by metalorganic chemical vapor deposition (MOCVD) on GaAs/Si substrates. The results are compared with the diffusion of ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe669eb6791917a131089d7a5722552b
https://doi.org/10.1063/1.41078
https://doi.org/10.1063/1.41078
Autor:
Jen-Tai Hsu, C. R. Viswanathan
Publikováno v:
Japanese Journal of Applied Physics. 33:683
Low temperature charge pumping (CP) current measurements were carried out on 100 µm/10 µm N-channel metal-oxide-semiconductor (NMOS) transistors to investigate the interface state density. Interface states comprise traps and generation-recombinatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3d01d539e759db8560d4f39381bc9e8
https://doi.org/10.1143/jjap.33.683
https://doi.org/10.1143/jjap.33.683