Výsledky vyhledávání - "C. R. Tonheim"

HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization

Autor: Kjell Ove Kongshaug, E. Selvig, R. Haakenaasen, L. Trosdahl-Iversen, C. R. Tonheim, J. B. Andersen, T. Lorentzen, Paul Gundersen

Publikováno v: Journal of Electronic Materials. 39:893-902

This paper presents results from recent work on molecular beam epitaxy growth of HgCdTe at the Norwegian Defence Research Establishment (FFI), including studies of material properties and fabrication of photodiodes and nanostructures. Systematic stud

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e9a01f40b9d002cd0c535493491c197
https://doi.org/10.1007/s11664-010-1211-7

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Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

Autor: E. Selvig, C. R. Tonheim, R. Haakenaasen, T. Lorentzen, Torbjørn Skauli, Kjell Ove Kongshaug

Publikováno v: Journal of Electronic Materials. 37:1444-1452

The defect morphology in HgTe and CdHgTe was studied in (211)B-oriented layers grown in a 20°C temperature range around the optimal growth temperature. The density of defects varies strongly with the growth temperature. In HgTe, the shape of the mic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a260a7799ed2bb256dada18400ae1d4d
https://doi.org/10.1007/s11664-008-0447-y

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Photoluminescence from CdxHg1-xTe

Autor: T. Lorentzen, Erik Brendhagen, Trond Brudevoll, S Nicolas, R. Haakenaasen, E. Selvig, M Breivik, C. R. Tonheim, A D van Rheenen, Harald Steen

Publikováno v: Journal of Physics: Conference Series. 100:042041

We present important aspects of photoluminescence (PL) of CdxHg1-xTe in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0826768bad3ab405c03a0c8c7a305cd6
https://doi.org/10.1088/1742-6596/100/4/042041

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Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

Autor: Anette Eleonora Gunnæs, S Nicolas, R. Haakenaasen, C. R. Tonheim, E. Selvig, M Breivik

Publikováno v: Journal of Physics: Conference Series. 100:042024

A study of the photoluminescence from a four-period CdxHg1-xTe multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c8938be1c71e459d55847d541c4b681
https://doi.org/10.1088/1742-6596/100/4/042024

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Defects in CdHgTe grown by molecular beam epitaxy on (211)B-oriented CdZnTe substrates

Autor: R. Haakenaasen, C. R. Tonheim, Torbjørn Skauli, Henrik Hemmen, T. Lorentzen, E. Selvig, Kjell Ove Kongshaug

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:525

A systematic study of the evolution of the defect morphology and crystalline quality in molecular beam epitaxially grown CdxHg1−xTe epilayers with growth temperature is presented. The layers were characterized with optical microscopy, atomic force

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23f5d614fc978e1453ea8291d7ead6e4
https://doi.org/10.1116/1.2868782

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Defects in HgTe grown by molecular beam epitaxy on (211)B-oriented CdZnTe substrates

Autor: E. Selvig, C. R. Tonheim, K. O. Kongshaug, T. Skauli, T. Lorentzen, R. Haakenaasen

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:1776

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::06374cbd50fd6fad204d57501eef9179
https://doi.org/10.1116/1.2787876

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