Zobrazeno 1 - 10
of 41
pro vyhledávání: '"C. R. Stanley"'
We have measured optically detected cyclotron resonance using far-infrared radiation on an exceptionally pure sample of GaAs in fields up to 15.5 T. This relatively new experimental technique is shown to offer high resolution of free and donor impuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::468c6121f9327e8ff3aca0584191ecd8
https://doi.org/10.1088/0268-1242/9/2/012
https://doi.org/10.1088/0268-1242/9/2/012
Autor:
R. P. Starrett, Philip E Simmonds, C. R. Stanley, R. G. Clark, Roger A Lewis, R. J. Heron, A.V. Skougarevsky
Publikováno v:
Scopus-Elsevier
The central-cell correction has been determined experimentally for the two donor impurities S and Si in GaAs. Data have been obtained for magnetic fields to 39 T, corresponding to γ≈6. The observed behavior is in good agreement with theory. The an
Giant suppression of shot-noise as signature of coherent transport in double barrier resonant diodes
Autor:
V. YA ALESHKIN, N. V. ALKEEV, V. E. LYUNCHENKO, C. N. IRONSIDE, J. M. L. FIGUERIDO AND C. R. STANLEY, REGGIANI, Lino
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::8e175e3f2aaf31e0ee95c63a1cddc28c
https://hdl.handle.net/11587/328936
https://hdl.handle.net/11587/328936
Autor:
C R Stanley, S.J.A. Adams, Ata Koohian, A H Kean, Ibrahim R. Agool, K Mitchell, C. R. Pidgeon, B. C. Cavenett, M G Wright, N Ahmed
Publikováno v:
Semiconductor Science and Technology. 7:357-363
Novel far-infrared optically detected cyclotron resonance (FIR-ODCR) techniques are used to investigate GaAs epilayers and the results are compared with conventional cyclotron resonance performed at far-infrared frequencies and ODCR at microwave freq
Autor:
Sandip Ghosh, Tetsuya D. Mishima, Subhananda Chakrabarti, S. Sengupta, Nilanjan Halder, C R Stanley
Publikováno v:
Nanotechnology. 19(50)
The vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin (7-9 nm) spacer layer has been investigated by transmission electron microscopy and photoluminescence measurements. The nanoscale dots are g
Publikováno v:
Journal of nanoscience and nanotechnology. 8(12)
The effect of dot ripening pause on self organized InAs/GaAs QD's grown by MBE at two different growth rates and the resulting tunability of emission properties were studied with the help of PL and AFM experiments. We found the evolution of larger co
Autor:
C R Stanley, C. R. Pidgeon, B. C. Cavenett, N Ahmed, A H Kean, K Mitchell, G R Johnson, M G Wright, Ata Koohian
Publikováno v:
Semiconductor Science and Technology. 5:438-441
For the first time optically detected cyclotron resonance (ODCR) has been demonstrated using a CO2 pumped far-infrared (FIR) laser instead of microwaves. Both the electron and the light-hole cyclotron resonances have been observed in GaAs, as well as
Autor:
M. C. Holland, J. A. Wilson, S. MacFadzean, S. Hamill, M. MacKenzie, C. R. Stanley, A. R. Long, T. McMullen, P. Stopford
Publikováno v:
AIP Conference Proceedings.
Electron transport measurements performed at 1.6K on InxGa1−xAs (x=0.2 and x=0.3) pHEMT wafers have consistently shown the electron transport mobility to be higher in the [011] direction than in the [011] direction. Cross‐sectional TEM imaging of