Zobrazeno 1 - 3
of 3
pro vyhledávání: '"C. R. Ito"'
Autor:
Milton Feng, D. G. McIntyre, C. R. Ito, R. Bean, K. C. Hsieh, R. W. Kaliski, H. B. Kim, K. Zanio
Publikováno v:
Journal of Applied Physics. 64:1196-1200
GaAs layers grown on misoriented silicon substrates are examined for defect reduction as a function of thermal annealing and degree of misorientation. These GaAs layers (3–4 μm) are grown by a two‐step metalorganic chemical vapor deposition proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8add24453efc6e294b5bf80f37f62e16
https://doi.org/10.1063/1.341884
https://doi.org/10.1063/1.341884
Publikováno v:
Applied Physics Letters. 54:341-343
The effects of hydrogenation and subsequent annealing on unintentionally doped GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition have been characterized by capacitance‐voltage measurements, Hall effect measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a033e40c8ac0fbede1b4ecf5a83e1364
https://doi.org/10.1063/1.100963
https://doi.org/10.1063/1.100963
Autor:
A G, de Moraes, S F, de Assis, S C, Pontes, J C, Gizzi, V M, Gimenes, C R, Ito, V F, Fontes, J E, Sousa
Publikováno v:
Arquivos brasileiros de cardiologia. 35(1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::64c1049557969e0a735e0952279f663d
https://pubmed.ncbi.nlm.nih.gov/7224888
https://pubmed.ncbi.nlm.nih.gov/7224888