Zobrazeno 1 - 10
of 16
pro vyhledávání: '"C. R. Gorla"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1850-1853
Piezoelectric ZnO thin films deposited on semiconductor substrates are used for surface and bulk acoustic wave and devices, which offer advantages such as low power consumption, circuit miniaturization, and cost reduction by integration with microwav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f253f387406f0db97e603aff2368bf47
https://doi.org/10.1116/1.1379323
https://doi.org/10.1116/1.1379323
Publikováno v:
Journal of Crystal Growth. 225:197-201
ZnO is a wide bandgap semiconductor possessing unique electrical, mechanical, and optical properties. Piezoelectric ZnO film has a high electro-mechanical coupling coefficient, which makes it a promising material for high frequency and low loss surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a26ad2d6b7f5b870122c094b67cdfde0
https://doi.org/10.1016/s0022-0248(01)00874-0
https://doi.org/10.1016/s0022-0248(01)00874-0
Publikováno v:
Journal of Applied Physics. 87:3736-3743
The solid state reaction between metalorganic chemical vapor deposition grown epitaxial ZnO films and the R-plane sapphire substrate after annealing at 1000 °C for various times in an O2/N2 atmosphere was studied in detail. Multiple epitaxial relati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2b50addc5c9a86b8b69486307204a0
https://doi.org/10.1063/1.372454
https://doi.org/10.1063/1.372454
Publikováno v:
Journal of Electronic Materials. 29:69-74
High-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C. In-situ nitrogen compensation doping was performed using NH3. Micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca7a3abfa393e18a0f7de4aeedcb892
https://doi.org/10.1007/s11664-000-0097-1
https://doi.org/10.1007/s11664-000-0097-1
Publikováno v:
Materials Science in Semiconductor Processing. 2:247-252
ZnO is a wide bandgap semiconductor material with high piezoelectric coupling coefficients. It can be used for making low-loss surface acoustic wave (SAW) filters operating at high frequency. We report MOCVD growth of epitaxial ZnO thin films on R-pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29461d438b6fa96a4daf5fe6639aefa3
https://doi.org/10.1016/s1369-8001(99)00022-0
https://doi.org/10.1016/s1369-8001(99)00022-0
Publikováno v:
Journal of Electronic Materials. 27:L72-L76
There has been increased interest in high quality ZnO films for use in a diverse range of applications such as in high frequency surface acoustic wave filters, buffer layers for GaN growth, transparent and conductive electrodes, and solid state laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64a81dd272f51912870cada5cc7d76ad
https://doi.org/10.1007/s11664-998-0083-6
https://doi.org/10.1007/s11664-998-0083-6
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:860-864
We have studied the formation of Si nanoparticles in a SiH4–Ar plasma discharge generated in a helical resonator type inductively coupled plasma reactor. It is observed that Si particles vary in sizes from 5 to 15 nm under different conditions. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f548a8f905b5da6873d3ed4167e5b60
https://doi.org/10.1116/1.580721
https://doi.org/10.1116/1.580721
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1063-1068
Highly transparent conductive Ga-doped zinc oxide (ZnO:Ga) has been deposited on 3 in.×4 in. Corning 7059 glass and other substrates using a high speed rotating disk reactor low pressure metal organic chemical vapor deposition system. Diethylzinc, o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf189241429f25960007f9b9f37dab02
https://doi.org/10.1116/1.580430
https://doi.org/10.1116/1.580430
Publikováno v:
Applied Physics Letters. 74:507-509
An optically addressed ultraviolet light modulator has been demonstrated which exploits the optical anisotropy in a ZnO film epitaxially grown on (0112) sapphire. This device achieves both high contrast and high speed by exploiting the anisotropic bl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08b4a755d2f959d3a21d825acafe563
https://doi.org/10.1063/1.124223
https://doi.org/10.1063/1.124223
Publikováno v:
1997 IEEE Ultrasonics Symposium Proceedings. An International Symposium (Cat. No.97CH36118).
There has been increasing interest in high quality piezoelectric ZnO thin films. ZnO has a high coupling coefficient, which makes it promising for high frequency, low loss SAW devices when the film is deposited on top of a high-velocity substrate suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8198d76bddfd1cd976fecfbfee1daf03
https://doi.org/10.1109/ultsym.1997.663009
https://doi.org/10.1109/ultsym.1997.663009