Zobrazeno 1 - 10
of 25
pro vyhledávání: '"C. R. Elsass"'
Autor:
R. D. Dupuis, U. Chowdhury, R. Berney, C. R. Elsass, James S. Speck, Y. Smorchkova, Said Elhamri, W. C. Mitchel, Umesh Mishra, Adam William Saxler
Publikováno v:
Journal of Applied Physics. 93:1079-1082
A study of aging effects on the electron transport properties of AlGaN/GaN heterostructures grown on sapphire and silicon carbide substrates using temperature dependent Hall effect measurements is presented with the focus on the variations in the mob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d91375c3c72255ce52c7fae93b0f24
https://doi.org/10.1063/1.1529074
https://doi.org/10.1063/1.1529074
Autor:
Christiane Poblenz, James S. Speck, C. R. Elsass, Paul T. Fini, Pierre Petroff, Steven P. DenBaars, B. Heying, Umesh K. Mishra
Publikováno v:
Journal of Crystal Growth. 233:709-716
The growth and electrical properties of the Al 0.15 Ga 0.85 N/GaN two-dimensional electron gas (2DEG) were studied for a range of III/V ratios during growth. All films were grown by RF-plasma assisted molecular beam epitaxy. Al 0.15 Ga 0.85 N growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d0104cef724aef5b05a776ea19c3a6
https://doi.org/10.1016/s0022-0248(01)01648-7
https://doi.org/10.1016/s0022-0248(01)01648-7
Publikováno v:
physica status solidi (b). 228:199-202
We report on the growth and optical properties of gallium nitride quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy. We have observed strong photoluminescence (PL) from the QDs from 8 to 750 K. Atomic force microscopy studies demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a5c14b7c713f813237cccfa72e7b69
https://doi.org/10.1002/1521-3951(200111)228:1<199::aid-pssb199>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:1<199::aid-pssb199>3.0.co
Autor:
E. Haus, Pierre Petroff, Umesh Mishra, C. R. Elsass, B. Heying, Adam William Saxler, James S. Speck, Sarah L. Keller, Paul T. Fini, W. C. Mitchel, Steven P. DenBaars, Said Elhamri, I. P. Smorchkova, J. P. Ibbetson
Publikováno v:
Journal of Applied Physics. 88:6583-6588
We have used the Shubnikov–de Haas and the Hall effects to investigate the effect of subband gap illumination on the transport properties of a very high mobility, μ=54 000 cm2/V s at T=1.2 K, Al0.09GaN0.91/GaN heterostructure. We have found that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee41b6767d6d27d13351c060a4f835cc
https://doi.org/10.1063/1.1322386
https://doi.org/10.1063/1.1322386
Autor:
Jasprit Singh, Umesh K. Mishra, Stacia Keller, James Ibbetson, Steven P. DenBaars, Yifei Zhang, C. R. Elsass, I. P. Smorchkova
Publikováno v:
Journal of Applied Physics. 87:7981-7987
In this article we report on two dimensional sheet charge and mobility in GaN/AlGaN heterostructure field effect transistors. Both experimental and theoretical results are presented. Experimental results are reported on samples grown by metal organic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee29f7537a754481bef5ca48ea0252a
https://doi.org/10.1063/1.373483
https://doi.org/10.1063/1.373483
Autor:
Paul T. Fini, Steven P. DenBaars, James S. Speck, E. Haus, C. R. Elsass, J. P. Ibbetson, P. Debray, B. Heying, Sarah L. Keller, Said Elhamri, Pierre Petroff, R. Perrin, Adam William Saxler, W. C. Mitchel, I. P. Smorchkova, Umesh Mishra
Publikováno v:
Journal of Applied Physics. 87:369-374
An AlxGa1−xN/GaN two-dimensional electron gas structure with x=0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. X-ray diffraction maps of asymmetric recip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c34ae042dbd872b561030d5b18b5c32
https://doi.org/10.1063/1.371869
https://doi.org/10.1063/1.371869
Autor:
E. Haus, I. P. Smorchkova, James S. Speck, J. P. Ibbetson, B. Heying, Steven P. DenBaars, C. R. Elsass, Ramakrishna Vetury, Umesh K. Mishra, Paul T. Fini
Publikováno v:
Journal of Applied Physics. 86:4520-4526
The formation of the two-dimensional electron gas (2DEG) in unintentionally doped AlxGa1−xN/GaN (x⩽0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy is investigated. Low-temperature electrical-transport measurements reveal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0bf5795ff39c1dac4aff7b1653070d8
https://doi.org/10.1063/1.371396
https://doi.org/10.1063/1.371396
Publikováno v:
Journal of Applied Physics. 85:6470-6476
The surfaces of GaN films grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM). Due to the high dislocation densities in the films (108 cm−2), the typical surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4436bda556e1a623dcf9a1e35f1d320f
https://doi.org/10.1063/1.370150
https://doi.org/10.1063/1.370150
Publikováno v:
Applied Physics Letters. 80:3551-3553
The polarization charge at AlxGa1−xN/GaN heterostructure interfaces arising from differences in spontaneous polarization between AlxGa1−xN and GaN and the presence of piezoelectric polarization in strained layers has been directly measured using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2284a2e19e1eab40304b216f1a81f3ba
https://doi.org/10.1063/1.1477275
https://doi.org/10.1063/1.1477275
Publikováno v:
Applied Physics Letters. 79:2749-2751
Local electronic properties in a molecular-beam-epitaxy-grown AlxGa1−xN/GaN heterostructure field-effect transistor epitaxial layer structure are probed using depth-resolved scanning capacitance microscopy. Theoretical analysis of contrast observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50466ae09d1fafc68d190d3f46eeefc7
https://doi.org/10.1063/1.1410342
https://doi.org/10.1063/1.1410342