Zobrazeno 1 - 10
of 137
pro vyhledávání: '"C. R. Eddy"'
Autor:
Nabil Bassim, R.L. Henry, M. Fatemi, D. K. Gaskill, C. R. Eddy, Mark Twigg, Michael A. Mastro, James C. Culbertson, Ronald T. Holm
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca70bec0a5f5d50df22150ed474db4e9
http://arxiv.org/abs/2009.01207
http://arxiv.org/abs/2009.01207
Autor:
C. R. Eddy, Michael A. Mastro, Travis J. Anderson, Joelson André de Freitas, James C. Gallagher, Lunet E. Luna, Jennifer K. Hite
Publikováno v:
Journal of Crystal Growth. 498:352-356
The availability of high quality, free-standing GaN substrates enables new device applications in III-nitrides, especially for vertical device structures. With the introduction of these native substrates, the properties of nitrides are no longer domi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b968b0300f000d30a83f44f4ca20ec17
https://doi.org/10.1016/j.jcrysgro.2018.06.032
https://doi.org/10.1016/j.jcrysgro.2018.06.032
Autor:
Alok Mukherjee, Chase T. Ellis, Guandong Wang, D. Kurt Gaskill, M. M. Arik, Youyan Liu, Joseph G. Tischler, C. R. Eddy, P. Fowler, Hao Zeng, E. Oliverio, Evan R. Glaser, Joseph L. Tedesco, R. L. Myers-Ward, Payam Taheri, J. Cerne
Publikováno v:
Physical Review B. 99
We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a fact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14e6eeef986d5ff6e3d2f34a7ec4fe2f
https://doi.org/10.1103/physrevb.99.085440
https://doi.org/10.1103/physrevb.99.085440
Autor:
Tatyana I. Feygelson, Eugene A. Imhoff, Jennifer K. Hite, Marko J. Tadjer, Fritz J. Kub, Bradford B. Pate, Andrew D. Koehler, Travis J. Anderson, C. R. Eddy, Karl D. Hobart
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:Q3036-Q3039
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfec35819121ccd2a8078755a873c70f
https://doi.org/10.1149/2.0071702jss
https://doi.org/10.1149/2.0071702jss
Autor:
Karl D. Hobart, Lunet E. Luna, R. L. Myers-Ward, James C. Gallagher, Michael A. Mastro, C. R. Eddy, Travis J. Anderson, Jennifer K. Hite
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:S3103-S3105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e0b335d9c036f90728663ed5c79d054
https://doi.org/10.1149/2.0221711jss
https://doi.org/10.1149/2.0221711jss
Publikováno v:
Scripta Materialia. 93:44-47
Recent results on atomic layer epitaxy (ALE) growth and characterization of (0 0 0 1)AlN on highly oriented (1 1 1)Pt layers on amorphous HfO2/Si(1 0 0) are reported. HfO2 was deposited by atomic layer deposition on Si(1 0 0) followed by ALE growth o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52b6569df1c0ee11ec8f9d067fb078d4
https://doi.org/10.1016/j.scriptamat.2014.08.027
https://doi.org/10.1016/j.scriptamat.2014.08.027
Autor:
Paul Thibado, J. K. Schoelz, Mehdi Neek-Amal, P. Xu, D. K. Gaskill, D. Qi, C. R. Eddy, François M. Peeters, Virginia D. Wheeler, Luke O. Nyakiti, R. L. Myers-Ward, Josh Thompson
Publikováno v:
Carbon
Epitaxial graphene is grown on a non-polar n(+) 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moire patterns of different s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::641b8a5a623cebc6bad6be94d7cedf31
https://doi.org/10.1016/j.carbon.2014.08.028
https://doi.org/10.1016/j.carbon.2014.08.028
Autor:
Luke O. Nyakiti, N. A. Mahadik, D. K. Gaskill, Eugene A. Imhoff, C. R. Eddy, Robert E. Stahlbush, Karl D. Hobart, R. L. Myers-Ward, Virginia D. Wheeler
Publikováno v:
Crystal Growth & Design. 14:5331-5338
The conversion of basal plane dislocations (BPDs) to electrically benign threading edge dislocations in 4° off-axis 4H–SiC epilayers has been investigated using ultraviolet photoluminescence imaging. The conversion spontaneously occurred throughou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64be71609e78755ebbba1ad03aec09a
https://doi.org/10.1021/cg500830j
https://doi.org/10.1021/cg500830j
Autor:
Harry M. Meyer, Jennifer K. Hite, T. Hossain, N.Y. Garces, C. R. Eddy, Neeraj Nepal, Daming Wei, James H. Edgar
Publikováno v:
physica status solidi c. 11:898-901
This study compares the physical, chemical and electrical properties of Al2O3 thin films deposited on gallium polar c- and nonpolar m -plane GaN substrates by atomic layer deposition (ALD). Correlations were sought between the film's structure, compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be988b5f6942907b156bead78489a10
https://doi.org/10.1002/pssc.201300677
https://doi.org/10.1002/pssc.201300677