Zobrazeno 1 - 10
of 10
pro vyhledávání: '"C. R. Bolognesi"'
Autor:
S. Hamzeloui, F. Ciabattini, A. M. Arabhavi, W. Quan, D. Marti, M. Ebrahimi, O. Ostinelli, C. R. Bolognesi
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d999167f6fc67db97e3531d04fc47a6
https://doi.org/10.1109/bcicts53451.2022.10051732
https://doi.org/10.1109/bcicts53451.2022.10051732
Autor:
C. R. Bolognesi, O. J. S. Ostinelli
Publikováno v:
Applied Physics Letters, 119 (24)
GaAs0.51Sb0.49 is lattice-matched to InP and finds electron transport applications in base or absorber layers in high-speed heterostructure bipolar transistors or photodiodes, because its staggered (“type-II”) band alignment with InP favors elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a25036156ad512ee823fdc0ca137029
Publikováno v:
Applied Physics Letters. 83:5548-5550
The electron impact ionization coefficient αn(E) in InP is determined from electron multiplication measurements in NpN InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs). The staggered (“type-II”) band lineup between the p+ GaAs0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08d51f4c21f60535e1d505555ed57c4b
https://doi.org/10.1063/1.1637446
https://doi.org/10.1063/1.1637446
Autor:
Herbert Kroemer, Chanh Nguyen, C R Bolognesi, Achim Wixforth, B. Brar, Jörg P. Kotthaus, J. Scriba, C. Gauer
Publikováno v:
Semiconductor Science and Technology. 9:1580-1583
The influence of conduction band non-parabolicity on the cyclotron resonance of a two-dimensional electron system in InAs quantum wells is investigated. We demonstrate that the experimentally determined dependence of the cyclotron mass on the carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72659146512448c00266d6e9852816c4
https://doi.org/10.1088/0268-1242/9/9/002
https://doi.org/10.1088/0268-1242/9/9/002
Autor:
Herbert Kroemer, Jörg P. Kotthaus, Chanh Nguyen, Achim Wixforth, J. Scriba, C R Bolognesi, G. Tuttle, John H. English
Publikováno v:
Semiconductor Science and Technology. 8:S133-S136
Electron cyclotron resonance is studied in very deep quantum wells consisting of InAs between AlSb barriers. High electron mobility and strong conduction band non-parabolicity together with the small effective mass and the large effective g factor of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecd4d0b577757ffc2e8f61869e794a81
https://doi.org/10.1088/0268-1242/8/1s/030
https://doi.org/10.1088/0268-1242/8/1s/030
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:843-845
Modulation doping of InAs/AlSb quantum wells generally requires the use of chalcogenide donor impurities because silicon, the usual donor of choice in molecular beam epitaxy, displays an amphoteric behavior in antimonide compounds. In the present art
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6374acbb61011e4ae7992e395a167a08
https://doi.org/10.1116/1.581035
https://doi.org/10.1116/1.581035
Publikováno v:
Applied Physics Letters. 69:3531-3533
We report on the implementation of InAs‐channel heterostructure‐field‐effect transistors (HFETs) fabricated with InAs/AlSb short‐period superlattice barriers. The InAs/AlSb superlattice barrier structure is advantageous for InAs/AlSb HFETs be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670ca5faca59c30353679c4775ae6c5c
https://doi.org/10.1063/1.117235
https://doi.org/10.1063/1.117235
Publikováno v:
Applied Physics Letters. 57:575-577
In this letter we report the Arrhenius‐type dependence of the valley current density on inverse temperature in a triple‐well asymmetric resonant tunneling diode. The activation energy is found to be equal to the effective phonon energy representi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bb90d3b4c0a90e2f940ce721af27285
https://doi.org/10.1063/1.103625
https://doi.org/10.1063/1.103625
Autor:
Herbert Kroemer, C R Bolognesi, A. Simon, Jörg P. Kotthaus, Achim Wixforth, Chanh Nguyen, J. Scriba, C. Gauer, G. Tuttle
Collective intersubband resonances in InAs/AlSb single quantum wells are studied in terms of their dependence on the well width and the electron density. The transitions are found to lie within the atmospheric windows of 8–12 μm and 3–5 μm, res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49091a032e8727dde483f306333c1ff8
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/61325
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/61325
Publikováno v:
Electronics Letters. 26:1163
The first room temperature operation of a triple well rectifying resonant tunnelling diode with a high current density of 8600 A/cm2 is demonstrated. These devices exhibit negative differential resistance in the forward direction only, with peak-to-v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1973b2dc6ad3fe5427ec93ba208885a1
https://doi.org/10.1049/el:19900752
https://doi.org/10.1049/el:19900752